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MuPix8 – Large Area Monolithic HVCMOS Pixel Detector for the Mu3e Experiment

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KIT – The Research University in the Helmholtz Association

MuPix8 – Large Area Monolithic HVCMOS Pixel Detector for the Mu3e Experiment

Alena Weber 1,2 , Heiko Augustin 2 , Niklaus Berger 3 , Sebastian Dittmeier 2 , Felix Ehrler 1 , Lennart Huth 2 , Mridula Prathapan 1 , Ivan Perić 1 , Rudolf Schimassek 1 , André Schöning 2 , Dirk Wiedner 2 , Hui Zhang 1

Highlights of MuPix8

Large area: 1 x 2 cm²

180 nm High Voltage CMOS (HVCMOS) technology on high resistivity wafers (AMS aH18)

128 columns, each with 200 pixels, monolithic readout Fast hit scan logic

New readout electronics with several readout modes for timewalk correction

Efficieny greater than 99.6%

Application of the MuPix in the Mu3e experiment

Requirements of the pixel detectors for the Mu3e experiment at PSI Vertex resolution: ~100 μm

Time resolution: 20 ns

Detector thickness: max. 50 μm

Can be achieved by HVCMOS technology

HVCMOS Technology

CMOS monolithic pixel sensors with depleted sensitive volume Monolithic means the sensor and the readout electronics are integrated on a single silicon chip

High voltage usage for fast charge collection and larger active area

Structure of MuPix8

The pixel matrix is divided into three submatrices with different signal transmission modes from pixel to readout

Submatrix A uses voltage signal transmission, submatrices B and C use current signal transmission

Fast Hit Scan Logic

MuPix8 uses a scan logic which allows a faster search for a hit The scan logic works with pixel groups, if a hit is detected in a group

the following groups are skipped

This leads to a faster hit transmission to the end of column

.

cell number

0 10 20 30 40 50

delay time (ns)

0 0.5 1 1.5 2

2.5 standard logic fast logic

1Karlsruhe Institute of Technology, 2University Heidelberg, 3University Mainz

New readout electronics with several readout modes

The MuPix8 has new readout electronics for timewalk correction Two comparators for each pixel are used

Timewalk Problem

The timestamp marks when the signal crosses the threshold voltage, however there is a delay between the particle hit and the threshold

crossing moment

This delay depends on signal amplitude and is called timewalk

The standard method for the timewalk correction is a ToT (time over threshold) measurement

Mode with two threshold voltages

The lower threshold voltage delivers a time- stamp with less timewalk

The higher threshold voltage confirms that the first timestamp belongs to a signal

Advantage: less timewalk, small noise rate

Mode with ADC threshold voltage

The constant threshold delivers the timestamp and activates the ramp signal

The ramp signal crosses the signal level,

delivering a second timestamp for amplitude information

Advantage: better linearity, less noise

Efficiency

In 2017, first testbeams with MuPux8 at DESY and at CERN were performed

Results show a high efficiency > 99.6% at 125 MHz clock

Outlook

A new HVCMOS pixel detector (MuPix9) has been submitted in 2017 to test the following improvements:

New slow control

New power regulators, to evaluate serial powering concepts Design of 2 x 2 cm2 chip ongoing

time voltage

threshold voltage

timewalk

time voltage

threshold 2 threshold 1

time voltage

constant threshold raising threshold

A B C

199

0 ...

...0 199 EOC

Pixels

Readout

End of column

199

0 ...

...0 199

199

0 ...

...0 199

EOC EOC

47 ... 0 47 ... 0 31 ... 0

Alena Weber Email: alena.weber@partner.kit.edu Phone: +49 721 608 26304

fastIn x1

!x2 x3

!x4

y2 y1

fastIn

!x1

!x2 select2 select1

x5

!x6

y3 y4 y6 y5

!x3

!x4

!x5

!x6

select3

select6 select5 select4

x7

!x8 x9

y8 y7 !x7

!x8 select8 select7 y9 !x9 select9

1 cm 2 cm

n-well

n-well p-well n-well

isolated NMOS isolated PMOS

collection electrode - deep n-well p-substrate

HV

time (ns)

300 400 500 600 700 800

number of electrons

1000 2000 3000 4000 5000 6000 7000

sigma linear fit

X-ray calibration with Fe, Zn, Mo, Ag targets test signal callibration for linearity check number of electrons

3000 4000 5000 6000 7000

400 500 600 700 800 900

40 60 80 100 120 140 160 180 0.8

0.95 0.9 0.95

1 Preliminary

eciency

threshold (mV) 10 20 30 40

20 40 60 80 100 120 140 160 180

0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1

eciency

column (pixel)

row (pixel) time (ns)

KIT ASIC and Detector Laboratory

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