JEDEC RECOMMENDED LETI'ER SYMBOLS AND ABBREVIATIONS FOR SEMICONDUCTOR DATA SHEETS AND SPECIFICATIONS

(This Standard was formulated under the cognizance of JEDEC Committee JS-12 on Military Specifications)

INTRODUCTION

This list of recommended letter symbols and abbreviations is the result of work of JS-12, Com-mittee on Military Specifications. Published standards of the American Standards Association, Institute of Radio Engineers and the American Institute of Electrical Engineers, Military Standards, and common usage were all considered in the preparation. The U. S. delegates to the International Electrotechnical Commission were consulted during the preparation, and the standards adopted by that group are in close agreement with this list.

It is intended that the list be reviewed from time to time for additions, deletions or revisions as progress in the field dictates.

CRITERIA AND CONVENTIONS FOR LETTER SYMBOLS

A letter symbol is a character which is used to designate an electrical or physical quantity or an electrical parameter. This use occurs most frequently in mathematical equations (and specifica-tions). Two or more symbols printed together represent a product (multiplication). Letter symbols are distlnguished from abbreviations; the latter are used for the units of measurement of the quan-tities or parameters. The chart shown below will illustrate this point.

UNIT OF

QUANTITY LETTER SYMBOL MEASUREMENT ABBREVIATION

Current I, i Amper€' AMP, amp or A, a'

Temperature T (upper-case only) Degree DEG,deg'

1 The abbreviation A or a is used with the metric system of multiplier prefixes, for example, J.l.A or J.&a for microampere.

2 Ohm should not be abbreviated in text. The abbreviation "0" may be used elsewhere with the metric system of mul-tiplier prefInL

3 The abbreviation DEG or deg is not used in combination with the abbreviations for temperature seales. The abbre-viation "0,, is usually used as the combining form for the word degree, for example, °C for degree Centigrade.

1. Letter Symbols for Electrical or Physical Quantities or Electrical Parameter.

a. Primary symbol: The letter symbol used to designate a quantity or parameter shall be a single letter. This single letter, referred to as the primary symbol, may be modified by subscripts or superscripts.

EXCEPTIONS:

The symbol BV for breakdown voltage, which has become accepted through long usage, has been continued.

Symbols for frequency cutoff parameters, such as fhl' for small-signal short-circuit forward current transfer ratio cutoff frequency (common emitter), have been formed to provide a consistent method of establishing frequency cutoff symbols for other parameters, such as the y's and z's.

b. Secondary symbol: A SUbscript or superscript, referred to as the secondary symbol, may be used to modify the primary symbol. The secondary symbol is used to designate special values of states, points, parts, times, etc. An abbreviation may be used as a subscript (secondary symbol).

c. A letter symbol containing both primary and secondary letters has a unique meaning. This meaning is not necessarily the meaning associated with the primary symbol alone, the secondary symbol alone, or a combination meaning formed from both.

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d. Descriptive information concerning a letter symbol may be added in parentheses after the secondary symbol but on the same level as the primary symbol. Examples: hi. (real) and reE (sat).

The abbreviations rms, max, dc and avg are excluded from the above as this type of information is to be presented as part of the secondary symbol without parentheses. (See paragraph 1f below)

e. Principles of application:

1.

2.

1.

2.

PRIMARY SYMBOLS

Use lower-case letters for: Use upper-ease letters for:

Instantaneous value of current, volt- 1. RMS, maximum, and average (de) age, and power which vary with time. values of current. voltage. and power.

Example: i, v, p. (See Figure 1.) Examples: I, V, P. (See Figure 1.) Values of four-pole matrix parameters 2. Values of four-pole matrix parameters

(ratios of terminal electrical quanti- (ratios of terminal electrical quanti-ties), or other resistances, im pedances, ties), or other resistances, impedances, admittances, etc., inherent in the de- admittances, etc., in the external c;r-vice. Examples: hIB' rb, Ztb, y". cuits. Examples: Roo Z" Yo'

SECONDARY SYMBOLS Use lower-case letters for:

Instantaneous varying component val-ues and rms or effective varying com-ponent values. Examples: i" I,.

Small signal values of parameters:

Instantaneous total values, maximum values, and average (dc) values. Ex-amples: ic, I^CMAX, Ic.

Static values and large signal values of parameters. Examples: rB, bIB, hFRa

(NO SIGNAL) le (INSTANTANEOUS

TOTAL VALUE)

TIME

Figure 1. Chari of Collector Current Versus Time

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(1) If necessary to distinguish between .maximum, average, or root-mean-square values, the appropriate abbreviation may be used as a subscript. Examples: I ... ICAl"G, I" ....

(2) Electrode abbreviations used as subscripts shall be as shown below:

E, e = emitter electrode B, b

=

base electrode

C, c

=

collector electrode J, j

=

electrode, general

The use of upper-case letters and lower-case letters for electrode abbreviations shall conform to the following chart :

ELECTRODE ABBR FOR USE AS

SYMBOL SIGNIFICANCE SUBSCRIPT

i,v, p Instantaneous varying

component value e, b, c.j

a. In textbooks and technical magazines, the use of italic type is recommended for letter symbols and letter subscripts, whether upper or lower case. Numerals appearing as subscripts shall be printed in roman type.

b. In specifications and technical reports prepared on a typewriter and intended for reproduc-tion by a photo-offset process, the use of convenreproduc-tional typewriter type faces is recommended for letter symbols and letter subscripts, whether upper or lower case, and for numerals appearing as subscripts.

CRITERIA AND CONVENTIONS FOR ABBREVIATIONS

An abbreviation is a shortened form of a word or word combination. Abbreviations do not en-compass letter symbols or graphical symbols.

1. Short Word •. Short words are not usually abbreviated unless their abbreviations have been established by long practice.

2. Spaeiug. An abbreviation is usually written with no spaces left between the letters of the abbre-viation. The use of hyphens and slant bars is avoided where practicable.

3. Use of Period.. Periods are used only to avoid misinterpretation of an abbreviation.

4. Lettering. Upper-case or lower-case letters may be used as appropriate except where the use of a partiCUlar case has been established by long practice. A multiletter abbreviation will not be a mixture of upper-case and lower-case letters.

5. Sob&eripl8 and Supeneripl8. . Subscripts and superscripts are not used in abbreviations.

6. Clerit}'. Abbreviations shall be used only when their meanings are unquestionably clear. WHEN IN DOUBT, SPELL IT OUT.

1. Word Comhinatiou. Abbreviations or word combinations shall be used as such and shall not be separated for use singly.

8. Tenae aud Number. The same abbreviation shall be used for all tenses, and the singular and plural forms of a given word.

9. Type Feee. Abbreviations and numerals shall be printed in roman type.

---~

_- - -- - ^{- -}

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SYMBOLS AND ABBREVIATIONS FOR SEMICONDUCTOR DEVICES B, b base electrode

bo when multiple base electrodes are present, each is numbered in sequence (bI, b2 ... ) BV CBO breakdown voltage, collector to base, emitter open

BV CEO breakdown voltage, collector to emitter, base open

BVcER breakdown voltage, collector to emitter, with specified resistance between base and emitter BV CEO breakdown voltage, collector to emitter, with base short-circuited to emitter

BV EBO breakdown voltage, emitter to base, collector open BV R breakdown voltage, reverse

C, c collector electrode

Ct. input capacitance (common base) Cte input capacitance (common collector) Ct. input capacitance (common emitter) Co. output capacitance (common base) Cae output capacitance (common collector) C.. output capacitance (common emitter) E, e emitter electrode

fhr• small-signal short-circuit forward current transfer ratio cutoff frequency (common base)

f"e small-signal short-circuit forward current transfer ratio cutoff frequency (common collector)

f.,. small-signal short-circuit forward current transfer ratio cutoff frequency (common emitter)

fmas maximum frequency of oscillation

GPB large-signal average power gain (common base) Gpb small-signal average power gain (common base) Grc large-signal average power gain (common collector) Gpe small-signal average power gain (common collector) GPE large-signal average power gain (common emitter) Gpo small-signal'average power gain (common emitter)

hFn static value of the forward current transfer ratio (common base) hlb small-signal short-circuit forward current transfer ratio (common base) hFo static value of the forward current transfer ratio (common collector) h'e small-signal short-circuit forward current transfer ratio (common collector) h"E static value of the forward current transfer ratio (common emitter) hie small-signal short-circuit forward current transfer ratio (common emitter) h'B static value of the input resistance (common base)

hi. small-signal value of the short-circuit input impedance (common base) hIO static value of the input resistance (common collector)

hie small-signal value of the short-circuit input impedance (common coilector) hm static value of the input resistance (common emitter)

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hi. (real) real part of the small-signal value of the short-circuit input impedance (common emitter) hOB static value of the open-circuit output conductance (common base)

h.b small-signal value of the open-circuit output admittance (common base) hoo static value of the open-circuit output conductance (common collector) h.. small-signal value of the open-circuit output admittance (common collector) hoE static value of the open-circuit output conductance (common emitter) h.. small-signal value of the open-circuit output admittance (common emitter) h.b small-signal value of the open-circuit reverse voltage transfer ratio (common base) h", small-signal value of the open-circuit reverse voltage transfer ratio (common collector) h.. small-signal value of the open-circuit reverse voltage transfer ratio (common emitter) I, i region of a device which is intrinsic and in which neither holes nor electrons predominate IB base current (dc)

Ib base current (rms) ib base current (instantaneous) 10 collector current (dc) Ie collector current (rms) ie collector current (instantaneous) lOBO collector cutoff current (dc), emitter open lOEO collector cutoff current (dc), base open

ICEB collector cutoff current (dc), with specified resistance between base and emitter lCEX collector current (dc), with specified circuit between base and emitter ICES collector cutoff current (dc), with base short-circuited to emitter IE emitter current (dc)

I. emitter current (nus) i. emitter current (instantaneous) lEBO emitter cutoff current (de), collector open IF forward current (dc)

iF forward current (instantaneous) 10 average output (rectified) current la reverse current (de)

ia reverse current (instantaneous) Ke thermal derating factor L. conversion loss

N, n region of a device where electrons are the majority carriers NF noise figure

P, p region of a device where holes are the majority carriers

PRE total power input (dc or average) to the base electrode with respect to the emitter electrode

PBE total power input (instantaneous) to the base electrode with respect to the emitter electrode POB total power input (dc or average) to the collector electrode with respect to the

base electrode

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PCB total power input (instantaneous) to the collector electrode with respect to the base electrode

PCB total power input (dc or average) to the collector electrode with respect to the emitter electrode

PeE total power input (instantaneous) to the collector electrode with respect to the emitter electrode

P EB total power input (dc or average) to the emitter electrode with respect to the base electrode

PEB total power input (instantaneous) to the emitter electrode with respect to the base electrode

P IB large-signal input power (common base) P'b small-signal input power (common base) PIC large-signal input power (common collector) P" small-signal input power (common collector) PIE large-signal input power (common emitter) P,. small-signal input power (common emitter) P OB large-signal output power (common base) Pob small-signal output power (common base) Poe large-signal output power (common collector) P., small-signal output power (common collector) POE large-signal output power (common emitter) P ^De small-signal output power (common emitter) PT total power input (dc or average) to all electrodes PT total power input (instantaneous) to all electrodes R. external base resistance

Rc external collector resistance

rCE(sat) collector to emitter saturation resistance RE external emitter resistance

6 thermal resistance

6'_A thermal resistance, junction to ambient 6'-0 thermal resistance, junction to case VBB base supply voltage (dc)

V BO base to collector voltage (de) V"" base to collector voltage (rms) v"" base to collector voltage (instantaneous) V ^BE base to emitter voltage (dc)

V be base to emitter voltage (rms)

Vbe base to emitter voltage (instantaneous) VOB collector to base voltage (de)

Ve• collector to base voltage (rms) ve• collector to base voltage (instantaneous) V co collector supply voltage (de)

V ^OE collector to emitter voltage (dc) Vee collector to emitter voltage (rms)

Vee collector to emitter voltage (instantaneous) V ^OE (sat) collector to emitter saturation voltage VEB emitter to base voltage (dc) V.. emitter to base voltage (rms) v.. emitter to base voltage (instantaneous) V EO emitter to collector voltage (dc) V.. emitter to collector voltage (rms)

Vee emitter to collector voltage (instantaneous) VEE emitter supply voltage (dc)

Vr forward voltage (dc)

v" forward voltage (instantaneous)

V ^ORr dc open-circuit voltage (floating potential) between the collector and base, with the emitter biased in the reverse direction with respect to the base

VECII' dc open-circuit voltage (floating potential) between the emitter and collector, with the base biased in the reverse direction with respect to the collector

VaT reach through voltage Va reverse voltage (dc)

Va reverse voltage (instantaneous)

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Im Dokument TEXAS INSTRUMENTS INCII' lATE (Seite 28-35)