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The M U P IX 7 High-Voltage

Monolithic Active Pixel Sensor

Ivan Perić 1 , Shruti Shrestha 2 , Niklaus Berger 3

1 Institut für Prozessdatenverarbeitung und Elektronik, Karlsruher Institut für Technologie (ivan.peric@kit.edu) 2 Physikalisches Institut, Universität Heidelberg (shruti@phys.ksu.edu)

3 Institut für Kernphysik, Universität Mainz (niberger@uni-mainz.de)

100 μm

20 μm

Pixel Cell

80 μm

Nine deep N-wells collect charges

4 μm

Amplifier

First amplification stage inside each pixel

40 μm

Column Logic

10 μm

Digital Pixel Logic

4 bit digital-to-analog converter (DAC) for threshold tuning with 4 SRAM cells

Coupling capacitor and second

amplification stage

Comparator

Address ROM

Digital control logic Manufactured in a

Austria Microsystems High-Voltage CMOS process with 180 nm feature size

32 x 40 pixels with 80 x 103 μm2 size Thinned to 50 μm

Bonded Chip

P-substrate N-well

Particle E field

Working principle

50 μm

Digital Control

Timestamp generation

Readout control state machine Data encoding (8bit/10bit)

Synthesized from Verilog code

Clock Generation and Serializer

Voltage-controlled oscillator (VCO) Phase-locked loop (PLL)

Serializer (up to 1.6 Gbit/s)

LVDS output

Low-voltage differential signalling Up to 1.6 Gbit/s

References

Mu3e Experiment at PSI

www.psi.ch/mu3e Berger group in Mainz

http://agberger.kph.uni-mainz.de/

I. Perić: A novel monolithic pixelated particle detector implemented in high-voltage CMOS technology

Nucl. Instrum. Meth., 2007, A582, 876

I. Perić, I. and C. Takacs: Large monolithic particle pixel- detector in high-voltage CMOS technology

Nucl. Instrum. Meth., 2010, A624, 504

I. Perić, C. Kreidl, and P. Fischer: Particle pixel detectors in high-voltage CMOS technology - New achievements

Nucl. Instrum. Meth., 2011, A 650, 158

I. Perić, I. et al.: High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments Nucl. Instrum. Meth., 2013, A731, 131

H. Augustin et al.: The MuPix high voltage monolithic active pixel sensor for the Mu3e experiment

JINST, 2015, 10, C03044

Sensor

Test-pulse injection

Charge- sensitive amplifier

Source follower

Amplifier

Baseline

Readout Comparator

Threshold

Periphery Pixel

Charge collection

Amplification

driverLine Per pixel threshold adjustment

AC-coupling

via CR-filter Digital output pulse

Pixel electronics

„High“ voltage (60-95 V)

Fast charge collection via drift

Referenzen

ÄHNLICHE DOKUMENTE

Perić, A novel monolithic pixelated particle detector implemented in high- voltage CMOS technology. Nucl.Instrum.Meth., 2007,

The measurements leading to these results have been performed at the Test Beam Facility at DESY Hamburg (Germany), a member of the Helmholtz

Peric, A novel monolithic pixelated particle detector implemented in high- voltage CMOS technology. Nucl.Instrum.Meth., 2007,

Peric, A novel monolithic pixelated particle detector implemented in high- voltage CMOS technology. Nucl.Instrum.Meth., 2007,

By setting the real injection amplitude to a value just above the threshold, increasing the tune values caused the counts to drop and the distribution of the time delays to get

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