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4HE FOLLOWING FIGURES SHOW Ì&-¾S OF THE DIFFERENT SUBSTRATES THAT WERE USED FOR THE GROWTHEXPERIMENTS7HILETHE EXACTORIENTEDSUBSTRATESWEREONLYEMPLOYEDFOR VERY EARLY GROWTH EXPERIMENTS THE l OFF TO Ì SUBSTRATES WERE USED FOR THE MAJORITYOFGROWTHEXPERIMENTS-OSTOFTHEDEVICESTRUCTURESWEREGROWNONTHElOFF TO SUBSTRATESASTHESEWEREAVAILABLEWITHAÀDIAMETER
AFM picture of GaSb substrate orientation: 2° off (100) to (111)A
Z: 33.2 nm
X: 6 µm Y: 6 µm
AFM picture of GaSb substrate orientation: 2° off (100) to (110)
X: 15 µm Y: 15 µm
Z: 11.0 nm
AFM picture of GaSb substrate orientation: (100) exact
Z: 18.4 nm
X: 6 µm Y: 6 µm
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4HE FOLLOWING FIGURES SHOW .ORMARSKI CONTRAST OPTICAL MICROGRAPHS OF A SOLAR CELL EPITAXIALSTRUCTUREGROWNONDIFFERENTSUBSTRATESINTHESAMERUN)TCANEASILYBESEEN THATTHEMORPHOLOGYOFTHELAYERISSTRONGLYDEPENDENTONTHESUBSTRATEMISCUTANGLE 7HILE EXACT SUBSTRATES GAVE VERY ROUGH MORPHOLOGIES WITH A HIGH DENSITY OF FACETTEDDEFECTSMUCHBETTERMORPHOLOGIESWEREOBTAINEDFORTHElTO ÌMISCUT
%VEN BETTER MORPHOLOGIES RESULTED ON l TO SUBSTRATES (ERE ONE BATCH OF SUBSTRATES GAVE NEARLY PERFECT MORPHOLOGIES WHILE A SECOND BATCH SHOWED SOME DEFECTS/BVIOUSLYTHECHOICEOFTHERIGHTSUBSTRATEISACRUCIALPOINTFORTHEGROWTHOF ANTIMONIDESÌDETAILEDMICROSCOPICSTUDYINTOTHENUCLEATIONBEHAVIOURASAFUNCTIONOF THESUBSTRATEMISCUTANGLEANDTHESUBSTRATEPREPARATIONWOULDBEOFHIGHINTEREST
Normarski contrast optical micrographs of solar cell epi-structure #732, grown on the above substrate-orientations left: (100) exact right: 2°off (100)
to (111)A
Normarski contrast optical micrographs of solar cell epi-structure #732, grown on GaSb, 2° off (100) to (110) left: first batch right: second batch
4HE FOLLOWING FIGURE SHOWS AN Ì&- PICTURE OF AN EPITAXIAL 'A3B LAYER OF NM THICKNESS4HELAYERWASDEPOSITEDONA EXACTSUBSTRATEINORDERTOEXAMINETHE SHAPE AND SIZE OF THE FACETTED DEFECTS AT SMALL FILM THICKNESSES 4HE COMPARISON BETWEENTHISLAYERANDTHEABOVESOLARCELLSTRUCTUREONA EXACTSUBSTRATESHOWS THAT ATHEDEFECTSFORMINTHEEARLYSTAGESOFTHEGROWTHAND
BTHETHICKERTHELAYERGETSTHEBIGGERTHEDEFECTSBECOME 4HESEFINDINGCOULDBEINTERPRETEDINTHEFOLLOWINGWAY
)FSTRUCTURALDEFECTSORIGINATEFROMINIMPERFECTNUCLEATIONPROCESSTHEDEFECTSWILLGROW ANDTHECRYSTALPLANESWITHTHELOWESTGROWTHRATEWILLREMAIN4HESEPLANESFORMTHE SURFACESOFTHEFACETTEDDEFECTSINTHEFIGURES4HEDEFECTSCOALESCEWHENTHEDEPOSITION PROCESSPROCEEDSSOTHETHICKSOLARCELLSTRUCTUREABOVESHOWSLESSBUTBIGGERDEFECTS THANTHETHINEPITAXIALLAYERBELOWÌSALREADYSAIDABOVEADETAILEDMICROSCOPICSTUDY INTOTHEHOMOEPITAXIALNUCLEATIONBEHAVIOUROF'A3BWOULDBEOFHIGHVALUE
NM'A3BEPILAYER GROWNON ONAXIS 'A3B SAMPLE
7HILE MISORIENTED 'A3B SUBSTRATES GAVE THE BEST RESULTS IN THE GROWTH PROCESS AT
&RAUNHOFER)3%THEPROCESSINTHE#LARENDONLABORATORYWASOPTIMISEDFOREXACT SUBSTRATES4HEFOLLOWINGFIGURECOMPARESALAYERGROWNAT&RAUNHOFER)3%IN&REIBURGON AlTO ÌSUBSTRATETOALAYERGROWNATTHE#LARENDONLABORATORYIN/XFORDONAN EXACT ANDAlTO SUBSTRATE 7HILE THE ATOMIC TERRACES ON THE EXACT SAMPLEINDICATEASTEPFLOWGROWTHMODETHEMORPHOLOGIESOFBOTHLAYERSGROWNON MISORIENTEDSUBSTRATESSUGGESTASTEPBUNCHINGMODE
3AMPLE 'A3B SUBSTRATE l OFF TO Ì GROWN AT &RAUNHOFER )3%
3AMPLE 'A3B SUBSTRATE l OFF TO GROWN AT 5NIVERSITY OF /XFORD
3AMPLE 'A3B SUBSTRATE EXACT GROWN AT 5NIVERSITY OF /XFORD
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