• Keine Ergebnisse gefunden

Ultraviolet photoelectron spectroscopy of Si-4 to Si-1000

N/A
N/A
Protected

Academic year: 2022

Aktie "Ultraviolet photoelectron spectroscopy of Si-4 to Si-1000"

Copied!
3
0
0

Wird geladen.... (Jetzt Volltext ansehen)

Volltext

(1)

Ultraviolet photoelectron spectroscopy of Si 4 to Si 1000

M. Astruc Hoffmann1, G. Wrigge1, B.v. Issendorff1,a, J. M¨uller1, G. Gantef¨or2, and H. Haberland1

1 Fakult¨at f¨ur Physik, Universit¨at Freiburg, H. Herderstr. 3, 79104 Freiburg, Germany

2 Fachbereich Physik, Universit¨at Konstanz, 78457 Konstanz, Germany

Abstract. Using a new experimental setup we have measured UV (hν= 6.4 eV) photoelectron spectra of cold silicon cluster anions Sin in a very broad size range. For sizes up ton= 46 the spectra exhibit rich structures. For larger sizes only smooth spectra have been obtained. No trace of a bandgap has been found even for clusters with more than 1000 atoms.

PACS. 36.40.Mr Spectroscopy and geometrical structure of clusters – 33.60.Cv Ultraviolet and vacuum ultraviolet photoelectron spectra – 71.24.+q Electronic structure of clusters and nanoparticles

1 Introduction

Silicon clusters and nanoparticles have attracted very strong interest during recent years. One of the reasons for this interest is their possible application in optoelec- tronics [1]. A wealth of experimental and theoretical work has been performed ([2–5] and references therein). For the determination of the cluster structures mobility measure- ments [5] and anion photoelectron spectroscopy [4] turned out to be especially useful. Up to now high quality photo- electron spectra were only available for Si4 to Si20. Here we present a new set of photoelectron data which extends this region up to Si1000.

2 Experiment

The apparatus used in this experiment will be described in detail in a forthcoming publication, and is only briefly sketched here. The clusters are produced by a gas aggrega- tion source [6]. Inside a liquid nitrogen cooled aggregation tube a magnetron sputter source injects silicon vapour into a mixture of helium and argon, which leads to cluster for- mation. Due to the magnetron discharge a large portion of these clusters is charged. The charge state depends on the cluster electron affinity. In the case of silicon the anion intensity is even higher than that of the cations. By chang- ing source parameters like sputtering power, gas pressure, gas composition and aggregation length the mean clus- ter size produced can be tuned from a few atoms up to a few ten thousand atoms. After expansion into the vacuum the clusters are inserted into a high resolution double- reflectron time-of-flight mass spectrometer, where a mul- tiwire mass gate positioned at the focus point of the first

a e-mail:bernd.von.issendorff@uni-freiburg.de

reflector can be used to select single cluster sizes with a se- lectivity of up tom/dm= 2000. The size selected clusters are then decelerated and inserted into a magnetic bottle photoelectron spectrometer, where they are irradiated by an ArF excimer laser (hν = 6.4 eV). The spectrometer has been optimized for the use of UV light. At the laser intensity used (about 1–3 mJ/cm2) the typical total back- ground photoelectron intensity is only a few percent of the cluster photoelectron intensity, so background subtraction is not necessary. In most cases the photoelectron spectra have been averaged over 10000 laser shots.

3 Results

Fig. 1 shows the series of photoelectron spectra obtained.

The results for the smallest clusters (n = 4 to 20) are in very good agreement with UV-spectra published ear- lier [4, 7, 8], although some details are better resolved here, which is probably due to the low cluster temperature. Fur- thermore the spectra of these small clusters are in excel- lent agreement with simulations [2, 4]. The clusters with sizes n = 20 to n = 44 exhibit rich structures as well, which have not been observed up to now. There is a nice correspondence between these results and the ion mobil- ity measurements by Hudginset al.[5]. They have shown that between n = 27 and n = 30 the cluster structure changes from prolate to more-spherical. This transition is also visible in the photoelectron spectra. Fromn= 20 to n = 26 (with the exception of n = 23 and n = 25) all spectra exhibit very similar profiles. Betweenn= 27 and n= 30 the spectra then suddenly become rather feature- less, which hints at the presence of two or more isomers in the beam, which is in accordance with the observations of Hudgins et al.At n= 31 then a new profile emerges, First publ. in: European Physical Journal / D 16 (2001), pp. 9-11

Konstanzer Online-Publikations-System (KOPS) URN: http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-87259

URL: http://kops.ub.uni-konstanz.de/volltexte/2009/8725

(2)

10

0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 1 2 3 4 5 6

0 1 2 3 4 5 6

29 11

12

13

14

15

16

17

18

19

20

21

22

23

BindingEnergy[eV]

24

25

27

28

30

33 26

31

32

34

35

36

37

38 4

5

6

8 7

10 9

0 1 2 3 4 5 6 0 1 2 3 4 5 6

0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 1 2 3 4 5 6

1000 500 170

39

40

41

42

43

110

120

130

140

150

200

220

400

450 300

350

44

45

46

47

48

49

50

55

60

70

75

80

85

90

BindingEnergy[eV]

100 65

Fig. 1.Photoelectron spectra of silicon cluster anions (6.4 eV photon energy). The spectra of Si500 and Si1000are plotted on a logarithmic scale.

(3)

11

which is fully developed at n = 33. Some remainder of this structure can be observed up ton= 40. Fromn= 41 again a new pattern emerges, which persists up ton= 44.

In this size range the mobility measurements of Hudgins et al.also seem to show some structural change, although not as clear as the one aroundn= 29. For larger sizes all of the spectra are rather smooth and featureless. This might be due to a high density of states, but is certainly also the result of the presence of several isomers. The larger clusters with up to n = 1000 show an only gradual on- set at the detachment threshold. For the clusters up to n = 100 a shoulder is visible at the threshold which can be interpreted as the LUMO (lowest unoccupied molecu- lar orbital) of the neutral cluster, which is occupied by the one additional electron. For the larger clusters this shoul- der merges into the general slope of the occupied states.

No trace of a band gap have been found even forn= 1000.

If there was a band gap, that is a large HOMO-LUMO gap of the neutral cluster, one would expect to observe a peak separated from the main onset. As such a peak is expected to be small, we have plotted the spectra of Si500and Si1000 on a logarithmic scale. Clearly no peak is visible. This was expected of course, as such clusters should have many sur- face states very close to the cluster “valence” band which will take up the one additional electron. It will be interest- ing to repeat this measurements with hydrogen passivated clusters, where this surface states should be saturated.

Such experiments are underway.

4 Summary

We have measured anion photoelectron spectra for many cluster sizes between Si4 and Si1000. For clusters with 21

to 44 atoms well structured spectra have been obtained, which should constitute a good test for calculations of the cluster properties. For larger sizes up ton= 1000 no trace of a bandgap has been found, which demonstrates the im- portance of surface states for the electronic structure of silicon clusters.

This work has been supported by the Deutsche Forschungsge- meinschaft through SFB 276, TP C17.

References

1. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, F. Priolo, Nature408, 440 (2000).

2. N. Binggeli, J.R. Chelikowsky, Phys. Rev. Lett. 75, 493 (1995).

3. L. Mitas, J.C. Grossmann, I. Stich, J. Tobik, Phys. Rev.

Lett.84, 1479 (2000).

4. J. M¨uller, B. Liu, A. Shvartsburg, S. Ogut, J.R.

Chelikowsky, K.W.M. Siu, K.-M. Ho, G. Gantef¨or, Phys.

Rev. Lett.85, 1666 (2000).

5. R.R. Hudgins, M. Imai, M.F. Jarrold, Ph. Dugourd, J.

Chem. Phys.111, 7865 (1999).

6. H. Haberland, M. Mall, M. Moseler, Y. Qiang, Th. Reiners, Y. Thurner, J. Vac. Sci. Technol. A12, 2925 (1994).

7. O. Cheshnovsky, S.H. Yang, C.L. Pettiette, M.J.

Craycraft, Y. Liu, R.E. Smalley, Chem. Phys. Lett. 138, 119 (1987).

8. M. Maus, G. Gantef¨or, W. Eberhardt, Appl. Phys. A70, 535 (2000).

Referenzen

ÄHNLICHE DOKUMENTE

In this work the growth of noble metal clusters on defect-rich carbon surfaces and their in- teraction with thiol molecules was studied by means of monochromatized X-ray

HK 24.3 Tu 15:00 H-ZO 20 Topics in Meson Photoproduction with Crystal Ball/TAPS at MAMI — • Sven Schumann for the A2-Collaboration — Institut f¨ ur Kernphysik,

Effect ofUVand y-radiations on cell growth The inhibition of the growth was influenced by the dose of radiation and the growth conditions of the cells before irradiation.. shows

recent experimental evidence points to the presence of several isomers of sodium doped water clusters in molecular beams, which are not responsible for the observed threshold

In the present study, we re- port compounds tentatively identifi ed using the dereplication method and compare them with those isolated by the traditional bioactivity-guided

The main reason for the deviations of the other theoretical curves from the measured points lies in the theoreti- cal threshold positions (short vertical

Photoelectron angular distributions have been measured for different orientations of the laser polarization vector relative to the polarization vector of the ionizing

The spin polarization component A (0) lies in the reaction plane, and its angular distribution is mea- sured by rotating the electron detector, b The linear polarization of