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Corrigendum: k.p theory for two-dimensional transition metal dichalcogenide semiconductors (2015, 2D Materials 2, 022001)

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2D Mater.2(2015)049501 doi:10.1088/2053-1583/2/4/049501

CORRIGENDUM

Corrigendum: k.p theory for two-dimensional transition metal dichalcogenide semiconductors (2015 2D Mater. 2 022001)

Andor Kormányos1, Guido Burkard1, Martin Gmitra2, Jaroslav Fabian2, Viktor Zólyomi3, Neil D Drummond3and Vladimir Fal’ko3

1 Department of Physics, University of Konstanz, D-78464 Konstanz, Germany

2 Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany

3 Department of Physics, Lancaster University, Lancaster LA1 4YB, UK

E-mail:andor.kormanyos@uni-konstanz.deandguido.burkard@uni-konstanz.de 2 November 2015

In our paper there are a couple of misprints which we wish to correct in order to avoid any possible confusion.

Firstly,intable12,in the first column,inthe5th and 6th lines the band index ‘VB’ is incorrect and should read ‘CB’ instead. The corrected table 12 reads:

Secondly, in appendix A, the index showing the symmetry of the wave function at theKpoint for the second band above the conduction band was incorrect:

instead of∣YEcb 2¢+ñ

1 the correct notation reads∣YEcb 2¢+ ñ.

2

This misprint affects three sentences in appendix A.

The first sentence in the second paragraph in appendix A should therefore read: ‘our seven-band model(without spin)contains every band between the third band below the VB(which we denote by VB-3)and the second band above the CB(denoted by CB+2), i.e., we take the basis {∣YEvb 3¢-,sñ Y,∣ Evb 2- ,sñ Y,∣ Evb 1-,sñ

2 1 2 ,

Y ¢ ñ Y ¢ ñ Y + ñ Y ¢+ ñ

Avb,s ,∣ Ecb,s ,∣ cb 1A ,s ,∣ cb 2E ,s }.

1 2

The sixth sentence in this paragraph should read: ‘this first group contains the following states:

Y ¢ ñ Y ¢ ñ Y ¢- ñ Y ¢+ ñ {∣ Avb,s ,∣ Ecb,s ,∣ Evb 3,s ,∣ Ecb 2,s }.

1 2 1

Finally, the ninth sentence in the fourth paragraph of appendix A should read:‘thus we arrive at a four-band model containing{∣YAvb¢,sñ Y,∣ Ecb¢,sñ

1 ,

Y ¢- ñ Y ¢+ ñ

Evb 3,s ,∣ Ecb 2,s }.

2 2

OPEN ACCESS

Content from this work may be used under the terms of theCreative Commons Attribution 3.0 licence.

Any further distribution of this work must maintain attribution to the author(s)and the title of the work, journal citation and DOI.

Table 12.Decay rate of monolayer MX2at theΓpoint in units of 1.

MoS2 MoSe2 MoTe2 WS2 WSe2 WTe2

MVB 1.44 0.91 1.20 1.54 1.02 1.35

XVB 2.31 2.19 3.18 2.33 2.10 3.07

HVB 1.53 1.20 2.03 1.60 1.23 1.98

MCB 5.10 3.50 5.44 3.50 3.28 5.37

XCB 3.84 4.28 6.01 4.50 4.48 5.99

HCB 5.01 3.89 5.50 6.40 3.96 5.49

© 2015 IOP Publishing Ltd

Konstanzer Online-Publikations-System (KOPS) URL: http://nbn-resolving.de/urn:nbn:de:bsz:352-0-418067

Erschienen in: 2D Materials ; 2 (2015), 4. - 049501 http://dx.doi.org/10.1088/2053-1583/2/4/049501

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