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Spin accumulation in diffusive conductors with Rashba and Dresselhaus spin-orbit interaction

Mathias Duckheim

*

and Daniel Loss

Department of Physics, University of Basel, CH-4056 Basel, Switzerland Matthias Scheidand Klaus Richter

Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany

İnanç Adagideli

Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla, Istanbul 34956, Turkey Philippe Jacquod

Department of Physics, University of Arizona, 1118 E. 4th Street, Tucson, Arizona 85721, USA 共Received 23 September 2009; revised manuscript received 23 December 2009; published 2 February 2010兲

We calculate the electrically induced spin accumulation in diffusive systems due to both Rashba共with strength␣兲and Dresselhaus共with strength␤兲spin-orbit interaction. Using a diffusion equation approach we find that magnetoelectric effects disappear and that there is thus no spin accumulation when both interactions have the same strength,␣=⫾␤. In thermodynamically large systems, the finite spin accumulation predicted by Chaplik, Entin, and Magarill关Physica E 13, 744共2002兲兴and by Trushin and Schliemann关Phys. Rev. B 75, 155323共2007兲兴is recovered an infinitesimally small distance away from the singular point␣=⫾␤. We show however that the singularity is broadened and that the suppression of spin accumulation becomes physically relevant共i兲in finite-sized systems of sizeL,共ii兲in the presence of a cubic Dresselhaus interaction of strength

␥, or共iii兲for finite-frequency measurements. We obtain the parametric range over which the magnetoelectric effect is suppressed in these three instances as 共i兲 兩␣兩−兩␤兩ⱗ1/mL, 共ii兲 兩␣兩−兩␤兩ⱗ␥pF2, and 共iii兲 兩␣兩−兩␤兩 ⱗ

/mpFᐉwithᐉthe elastic mean-free path andpFthe Fermi momentum. We attribute the absence of spin accumulation close to ␣=⫾␤ to the underlying U共1兲 symmetry. We illustrate and confirm our predictions numerically.

DOI:10.1103/PhysRevB.81.085303 PACS number共s兲: 73.23.⫺b, 72.25.Dc, 75.80.⫹q, 85.75.⫺d

I. INTRODUCTION

Many recent works have explored mechanisms to gener- ate spin accumulations and spin currents by passing electric currents through spin-orbit-coupled electronic systems. On the theoretical side, two related mechanisms have been pro- posed in disordered metals as alternatives to spin injection via ferromagnets or by optical means. They are current- induced transverse spin currents or voltages, a.k.a. the spin- Hall effect,1–12 and current-induced spin polarization 共CISP兲.13–18 The interplay between the two effects has been investigated in Ref. 19. These effects have been to some extent demonstrated experimentally,20–24and recent theoreti- cal works have extended them to include the mesoscopic regime, where fluctuations of both longitudinal and trans- verse spin currents in mesoscopic ballistic and diffusive sys- tems are being investigated.25–29 Most remarkably, it has been found that the same universality that applies to mesos- copic charge transport30 also applies to mesoscopic spin transport.25

The main focus of these theoretical as well as experimen- tal efforts is to use spin-orbit interactions共SOIs兲as a way to couple external electric fields to electronic spins, the hope being to generate, manipulate, and/or measure spin currents and accumulations by purely electrical means. SOI, however, also has the undesired effect of randomizing electronic spins.31This dichotomy theoretically limits the use of SOI- based magnetoelectric devices as components of information processors to the regime where the size of the device is much

less than the spin-relaxation length. A way to increase the spin-relaxation length has been proposed in Ref.32for sys- tems which exhibit SOI of both the Rashba,33

HR=␣共pxypyx兲 共1兲 and the Dresselhaus type34

HD=␤共pxxpyy兲, 共2兲 where ␴x,y are Pauli matrices. When the two interactions have equal strength, ␣=⫾␤, the SOI rotates electron spins around a single fixed axis. The spin along this axis becomes conserved while spins along the perpendicular directions un- dergo a deterministic rotation that depends only on the start- ing and end points of their trajectory. In particular, spins are not rotated along closed trajectories, therefore mesoscopic systems exhibit negative magnetoresistance when

=⫾␤,35–37 i.e., weak localization and not weak antilocal- ization, just as if SOI were absent. An effective spin random- ization still occurs if the system is connected to many exter- nal transport channels, where uncertainties in the position of injection and exit translate into uncertainties in the spin- rotation angle, unless injected electrons are prepared as spin eigenstates of the Hamiltonian.32In Ref.32关see, in particu- lar, Eq.共7兲therein兴spatially periodic modes in diffusive sys- tems have been first described for the case of equal strengths

=⫾␤, with spatial period given by the spin-orbit length.

These modes are long lived for these particular SOI strengths 共and in the absence of cubic SOI兲and are thus referred to as

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persistent spin helix,38–40 i.e., spin-polarization waves with specific wave vectors共px,py兲=共4m␣, 0兲. The absence of spin polarization at ␣=⫾␤ for finite frequencies has been re- ported by Bryksin and Kleinert41 and Raichev.42

Charge currents flowing through spin-orbit-coupled diffu- sive metals can generate finite spin accumulations.14,16 This magnetoelectric effect achieves one of the main goals of spin orbitronics—creating a steady-state finite magnetization solely by applying an external electric field. The direction of polarization depends on the direction of the electric field and on the spin-orbit interaction. An electric field in xdirection leads to an accumulation inyorxdirection for linear Rashba 关Eq. 共1兲兴 or Dresselhaus 关Eq. 共2兲兴 interaction, respectively.

The magnetoelectric effect in presence of both Rashba and Dresselhaus interaction has been investigated in Refs.17and 18which predicted that the CISP is given by the uncorrelated sum of the two accumulations generated by the Rashba and Dresselhaus SOI independent of one another. In particular, these predictions imply a finite accumulation at␣=⫾␤⫽0 whereas symmetry considerations 共to be discussed below兲 require the vanishing of CISP at this point. This motivates us to revisit this issue.

The purpose of this paper is twofold. First, we revisit the Edelstein magnetoelectric effect in presence of both Rashba and Dresselhaus linear spin-orbit interactions. Contrarily to Refs.17and18, we find that there is no CISP in any direc- tion at␣=⫾␤. However, the spin accumulation of Refs.17 and18is recovered at an infinitesimally small distance away from the singular point␣=⫾␤ in infinite systems. Our sec- ond goal is, therefore, and perhaps more importantly, to fig- ure out to what extent phenomena occurring specifically at

=⫾␤ are physically relevant. To that end, we consider three possible deviations from the treatment of magnetoelec- tric effects given in Refs.16–18in the form of共i兲finite-size effects, 共ii兲the presence of a cubic Dresselhaus interaction,

H3D=␥共pypx2ypxpy2x兲 共3兲 which is always there whenever a linear Dresselhaus inter- action is present, and 共iii兲 an ac electric field. We find that spin accumulations are suppressed over parametric ranges given in each of these three instances by 共i兲 兩␣兩−兩␤兩 ⱗ1/mLwhich depends only on the linear system sizeL, and not on the elastic mean-free path ᐉ, 共ii兲 兩␣兩−兩␤兩ⱗ␥pF2, and 共iii兲 兩␣兩−兩␤兩ⱗប

/mpFᐉ.

There is a symmetry at␣=⫾␤that is responsible for the vanishing of the magnetoelectric effect. In order to expose that symmetry, we first note that a linear SOI can be consid- ered as a nonabelian SU共2兲gauge field with components,

Ax= −m共␣␴y+␤␴x兲, Ay=m共␣␴x+␤␴y兲, Az= 0.

共4兲 The corresponding field strength has only two nonzero com- ponents,

Fxy= −Fyx=i关Ax,Ay兴= −m2共␣22兲␴z. 共5兲 They vanish for␣=⫾␤. Alternatively, one can consider the rotated Hamiltonian given below in Eq. 共10兲 for ␣=␤ and perform the unitary transformationU=eix␲/2to obtain

H=

H0+ H0

, 共6兲

whereH=2mp2⫾2␣px+V. We thus see that the SU共2兲gauge field reduces to two conventional U共1兲 gauge fields in the HamiltoniansH. This U共1兲field is a pure gauge field, im- plying vanishing spin conductance. To show this, one can, for instance, consider the linear-response expression for the spin conductance in a two-terminal mesoscopic sample,43

G=

Ci,Cj

dxdx

Tr关GR共x,x

兲Ji

GA共x

,x兲Jj兴, 共7兲 where the trace is over the spin degree of freedom, the inte- grals are performed over cross sectionsCi,jof the two leads connecting the system to external terminals and the current operators Ji=共iⵜiA兲/m and Jj=兵Jj,␴其. We write GR,Ax,x

兲=gR,Ax,x

eiA·共x−x, wheregRA is the retarded 共advanced兲Green’s function of the system in the absence of SOI. For ␣=⫾␤, one can gauge the SOI field out of the current operators via the transformation

eiA·x−xJie−iA·x−x= i

mi, 共8兲 which simultaneously gauges out the spin dependence of the Green’s function in Eq. 共7兲. We thus obtain 共␮=x,y,z兲,

G=

Ci,Cj

dxdx

jgR共x,x

兲ⵜi

gA共x

,x兲Tr关兴= 0. 共9兲 It is straightforward to see that this gauge argument also applies to CISP since the latter is given by a formula similar to Eq.共7兲with the operatorJj replaced by a Pauli matrix.

This paper is organized as follows. In Sec.II, we use spin- and charge-coupled diffusion equations to calculate the spin accumulation generated by a charge current flowing in a bulk diffusive sample with Rashba and Dresselhaus spin-orbit in- teractions. This approach allows us to consider spin polariza- tion in a finite-size system共Sec.II A兲, an ac external electric field共Sec. II B兲and in the presence of a cubic Dresselhaus interaction共Sec.II C兲. SectionIIIpresents numerical results on a tight-binding Hamiltonian confirming our analytical predictions. A summary of our results and final comments are given in the conclusions section.

II. ELECTRICALLY INDUCED SPIN POLARIZATION NEAR= ±

We consider a disordered two-dimensional electron gas 共2DEG兲with noninteracting electrons of massmand charge e. Choosing coordinates x,y and spin projections␴xand␴y

along the crystal axes 关11¯0兴 and 关110兴, respectively,44 the system is described by the Hamiltonian

H= p2

2m+⍀共p兲·␴+Vx兲. 共10兲 Here, p=共px,py, 0兲 is the electron’s momentum, ␴

=共␴x,␴y,␴z兲 is a vector of Pauli matrices 共we later use ␴0

=1兲, and

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⍀共p兲=

k,j=1 3

kjpjek=„−共␣␤兲py,共␣+␤兲px,0… 共11兲 is the internal field due to Rashba and linear Dresselhaus SOI given in Eqs.共1兲and共2兲, with strength␣and␤, respectively.

The disorder potential V is due to static, short ranged, and randomly distributed impurities leading to a mean-free path ᐉ=pF␶/m, where␶is the elastic scattering time andpFis the Fermi momentum. The interplay of disorder and SOI is char- acterized by dimensionless parameters ␰= 2pF,

= 2␤pF␶共ប⬅1兲 measuring the spin-precession angle due to Rashba and Dresselhaus SOI between two consecutive scat- terings at impurities. Our treatment presupposes ␰␣,␤Ⰶ1, which ensures that spin distribution functions vary slowly everywhere across the sample.

The coupled spin and charge excitations of the Rashba/

Dresselhaus spin-orbit-coupled 2D electron gas obey the fol- lowing integral equation共summation over doubly–occurring indices is assumed兲:

S共r,␻兲=

2mdr

Tr关GER共r,r

GE−␻A 共r

,r兲兴S共r

,␻兲, where Sx,y,z共r,␻兲 and S0共r,␻兲=n共r,␻兲 are the spin and charge distribution functions, respectively. We obtain diffu- sion equations in the presence of both Dresselhaus and Rashba SOI by gradient expanding this integral equation. For

␤= 0, these equations have been derived using diagrammatic perturbation theory,7 kinetic equations,6 and quantum Boltzmann-equation approaches.8For finite␣ andwe ob- tain the same diffusion equations as in Ref. 38 which we rewrite here for convenience

tn=Dⵜ2n+Ks−cxxSyKs−cyySx, 共12a兲

tSx=Dⵜ2SxKs−cyynKpxxSz−⌫xSx, 共12b兲

tSy=D2Sy+Ks−cxxnKpyySz−⌫ySy, 共12c兲

tSz=Dⵜ2Sz+KpyySy+KpxxSx−⌫zSz. 共12d兲 Here the spin-charge couplings Ks−cx,y, precession couplings Kpx,y, and spin-relaxation rates ⌫x,yare given by

Ks−cx = 4m2D␶共␣␤兲2共␣+␤兲, 共13a兲 Ks−cy = 4m2D␶共␣+␤兲2共␣␤兲, 共13b兲 Kpx= 4mD共␣+␤兲, 共13c兲 Kpy= 4mD共␣␤兲, 共13d兲

x= 1/␶x= 4m2D共␣+␤兲2, 共13e兲

y= 1/␶y= 4m2D共␣␤兲2, 共13f兲

z=⌫x+⌫y. 共13g兲

For a homogeneous sample with a homogeneous charge cur- rent density, it is tempting to assume homogeneous spin ac-

cumulations and ignore all partial derivatives ofSto obtain Sx⬀−Ks−cyxyn= −共␣␤兲␶⳵yn, 共14a兲 SyKs−cxyxn=共␣+␤兲␶⳵xn, 共14b兲

Sz= 0. 共14c兲

for the bulk Edelstein CISP. We note the cancellation of the potentially singular 共␣⫾␤兲 factors in␶x,y. For␣⫾␤ the spin-charge couplings go to zero but this behavior seems to be canceled by the diverging spin-relaxation time to give finite spin accumulations at ␣=⫾␤. However the same ap- proach for␣set to␤from the outset produces vanishing spin accumulations. The main reason behind this inconsistency is that one spin-relaxation time of the system diverges as ␣

⫾␤. However, in a real finite-sized system, the spin- relaxation time is bounded from above by the typical time to escape to the leads. This is so because leads provide spin 共and charge兲 relaxation, which for ␣=⫾␤ becomes the dominant spin-relaxation mechanism. Finite-sized effects are thus expected to induce a smooth crossover to zero CISP as

⫾␤. In the next section, we show that this is indeed the case.

A. Electrically induced spin polarization in finite systems We assume a rectangular sample with SOI attached to two external reservoirs defining the current direction and bounded by vacuum otherwise. We obtain for the charge dis- tribution function

n共E兲= 2共1 −x/L兲F共EeV兲+共2x/L兲F共E兲, 共15兲 whereF共E兲is the Fermi function. The appropriate boundary conditions are that the spin accumulations vanish at the res- ervoirs and the normal component of the spin current van- ishes at the hard wall boundaries.19,45

Solving the diffusion equations we obtain the maximum spin accumulation within the SOI region for an electric field along thexdirection,

Sy=S2DEG关1 − 1/cosh共mL兩␣␤兩/ប兲兴, 共16a兲

S2DEG=共␣+␤兲␶dn

dx. 共16b兲

For a field in theydirection, one has the same behavior for Sxinstead ofSy, with兩␣+␤兩 in the argument of the cosh and S2DEG= −共␣␤兲␶dn/dy. Equation共15兲 shows that the Edel- stein CISP goes smoothly to zero for␣=⫾␤, with the width of the crossover set solely by the system size, generating a singular behavior only as L→⬁. The size of the crossover region is, in particular, independent of the mean-free pathᐉ, hence of the strength of the impurity potential, since in our regime, ␰␣,␤Ⰶ1, the spin-orbit relaxation length is indepen- dent of disorder. Away from ␣=⫾␤, one recovers the stan- dard CISPS2DEG predicted in Refs.17 and18. The validity of Eq.共15兲is illustrated numerically below in Fig.2.

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B. ac-field-induced spin polarization

We next discuss the frequency dependence of CISP due to an ac electric field within the framework of the diffusion Eq.

共12a兲. For␣=⫾␤, this problem has already been addressed by Kleinert and Bryksin41 and Raichev,42 and we revisit it briefly only for completeness. In an infinite system the po- larization is spatially homogeneous such that all derivatives of S in Eqs. 共12b兲–共12d兲 vanish. The resulting bulk polar- ization then satisfies

共−i+xSx= −Ks−cyyn, 共17a兲 共−i+y兲Sx=Ks−cxxn, 共17b兲

共−i+z兲Sz= 0. 共17c兲

Further neglecting the influence of SOI onn one finds from Eq. 共15兲thatⵜn= −2␯eEand thus

Sx= 2␯eEy共␣␤兲Re关⌫x/共⌫xi␻兲兴, 共18a兲 Sy= − 2␯eEx共␣+␤兲Re关⌫y/共⌫yi␻兲兴, 共18b兲

Sz= 0 共18c兲

for finite but small ␻␶Ⰶ1. This result has been found in Refs.46and47. As for finite-sized systems, we see that both spin accumulations vanish at ␣=⫾␤ and that the result of Refs.17and18is only recovered at兩␣兩−兩␤兩⬃

/mpFᐉ. In the limit ␻␶0 the polarization vanishes at the singular points only.

C. CISP in presence of a cubic Dresselhaus interaction A linear Dresselhaus SOI, Eq.共1兲, is always accompanied by a cubic Dresselhaus interaction, Eq. 共3兲, whose strength might or might not be much weaker than that of the linear SOI. Because the presence of a cubic Dresselhaus SOI breaks U共1兲symmetry at␣=⫾␤, whose presence is crucial to the vanishing of the CISP, we investigate in this paragraph the effect that a cubic Dresselhaus SOI has on the CISP close to those points.

If the cubic contributions are weak we still expect a sup- pression of the CISP at␣=⫾␤ and that the additional spin relaxation due to H3Drenders the point ␣=⫾␤ nonsingular in the absence of boundary effects and at zero frequency. In the coordinates chosen in Eq.共10兲the cubic term in the SOI Hamiltonian is

H3D=1

2␥共py2px2兲共pxypyx兲. 共19兲 which has to be incorporated into the diffusion Eqs.

共12b兲–共12d兲. The relevant relaxation rates ⌫ and spin- charge couplings Ks−c have been calculated in Refs.46 and 48, respectively. In our notation they are given by

x,y=共␰⫾␰2 2␶

共␰⫾␰

4␶ +

2 16␶

=Dm2

4共2− 2共pF2+122pF4

,

共20a兲 Ks−cx,y =共␣⫾␤兲共␰⫿␰2

2 ⫾3

4共␣22兲␶pF + 1

16共3␣⫿␤兲␰2⫾ 3␰3

256␶pF, 共20b兲

where␰= 2pF3␶and the upper 共lower兲sign applies to thexy兲 component. In the presence of cubic SOI the relation Ks−cx,y=␶⌫y,x共␣⫿␤兲, which led to the cancellation of divergent terms in Eq.共14a兲–共14c兲, no longer holds. The polarization is given by Eq.共17兲,

S= 2␯ez␮␯−1Ks−c E, 共21兲 where now ⌫x,yandKs−cx,y are given in Eq.共20b兲, and ⑀z␮␯ is the totally antisymmetric tensor of order 3. The CISP is a rational function of␰␣,␤,␥.

Figure 1 shows the behavior of Sx,y in the presence of weak cubic Dresselhaus SOI共␰= 2pF3␶Ⰶ␰兲, as a function of ␣/␤. In this case, the polarization Sy does not vanish precisely at ␣=␤but shows a feature in the vicinity of this point. The minimum and maximum around the feature are at

=␤关1⫿␰/共␰2

2兲兴. The zeros are at␣=␤共1 −␰/2␰兲and

␣=␤共1 −␰/4␰兲. Thus we conclude that a weak cubic Dresselhaus interaction regularizes the singularity of the CISP around ␣=⫾␤. The suppression of the CISP occurs over a width ⬀␥pF2 around=⫾␤. The predicted analytical dependences ofSon Rashba and Dresselhaus SOI strengths in Eqs. 共20a兲,共20b兲, and共21兲 may serve as guidance when

0 0.5 1 1.5

Sy,(α,γ)/Sy,(α,γ=0)Sy,(α,γ)/Sy,(α,γ=0)

0 0.5 1 1.5 2

α/β α/β

ξγ= 0.0 ξγ= 0.01 ξγ= 0.02 ξγ= 0.03

−1 0 1 2 3

S(α,γ)/S(α=0)S(α,γ)/S(α=0)

Sy,E||x Sx,E||y

FIG. 1. Upper panel: Spin polarization Sx,/Sx,=0 for E关110兴 共dashed兲 and Sy,共/Sy,共=0兲 共solid line兲 for E关11¯0兴 as a function of Rashba SOI ␣/␤ for ␰= 2␤pF␶= 0.1 and ␰= 0.02.

Lower panel: ␣ dependence of the normalized spin polarization Sy,,/Sy,,=0 for E关110兴, ␰= 2␤pF␶= 0.1, and ␰

= 0.0, 0.01, 0.02, 0.03.

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attempting to tune quantum wells to the symmetry points ␣

=⫾␤ and demonstrate the vanishing of the CISP due to linear SOI at this point.

We briefly comment on the effect of extrinsic spin-orbit interaction. In Eq.共21兲we found that the spin polarization is no longer singular at ␣=⫾␤ in the presence of cubic SOI due to an additional, nonvanishing relaxation rate in Eq.

共20a兲. A similar regularization might be expected due to the relaxation rate caused by extrinsic SOI. However, the modi- fication of the diffusion equations due to extrinsic SOI共Refs.

1,49, and50兲and the resulting spin polarization are beyond the scope of the paper.

III. NUMERICAL SIMULATIONS

We now perform quantum transport simulations demon- strating the suppression of the CISP around the singular point

=⫾␤ for finite-size geometries. To this end we consider coherent electron transport in a disordered quantum wire of width W with linear Rashba and Dresselhaus SOI. For the calculations we use a tight-binding version of the Hamil- tonian共10兲that we obtain from a discretization of the system on a square grid with lattice spacing a. The Hamiltonian is H=H0+Hsowith

H0= −t

q,␴cq,␴ cq+xˆ,␴+cq,␴ cq+yˆ,␴+ H.c.+

q,␴Uqcq,␴ cq,␴,

共22a兲 Hso=

q

关−共tR+tD兲共cq,↑ cq+xˆ,cq,↓ cq+xˆ,兲+i共tRtD

⫻共cq,↑ cq+yˆ,↓+cq,↓ cq+yˆ,↑兲+ H.c.兴. 共22b兲 Here cq,␴ 共cq,␴兲 creates 共annihilates兲 an electron with spin

=orindirection on siteq=共qx,qy兲. The vectorsand have length a and point in x andy directions,t= 1/2ma2 denotes the hopping energy whiletR=␣/2aandtD=␤/2aare the Rashba and Dresselhaus SOI strength, respectively, in terms of which the spin-orbit lengths are given by ᐉsoR/D

=␲at/tR,D. We furthermore include spin-independent disorder of Anderson type in the region of length L, where the on-site energies are randomly box distributed with Uq

苸关−U/2 ,U/2兴. The disorder strengthUdetermines the elas- tic mean-free path ᐉ⬇48at3/2

EF/U2, which we tuned to values large enough that the system is not localized but much smaller than the size of the disordered region in all our simu- lations.

We obtain the local electron and spin densities as

n= −iTr关G共q,q兲兴, 共23a兲

S= −iTr关␴Gq,q兲兴 共23b兲 at siteq by numerically computing the lesser Green’s func- tion Gq,q兲. To this end we employ an efficient recursive lattice Green’s-function method based on matrix-reordering algorithms as described in Ref. 51. We calculate averaged quantities 具Si典 and 具n典, over several thousands of disorder configurations and over a rectangular region in the center of

the disordered part of the wire. We compare numerical data with the analytical prediction of Eq.共16兲. In Fig.2we show the normalized, spatially averaged spin accumulation, 具Sy典/S2DEG, as a function of ␣/␤ varying the linear system sizeL. As expected, we find complete suppression of具Sy典at

=␤, in agreement with Eq.共16兲. Moreover, the pronounced dip around␣=␤becomes sharper and sharper asLincreases, and the numerical data are in good qualitative agreement with the predicted line shape, Eq. 共16兲, in particular, they have the same parametric dependence. The agreement be- comes even quantitative if one normalizes the system size and the bulk spin accumulation in Eq.共16兲, as is done in Fig.

2. We justify this normalization by the effective reduction in the spin-orbit interaction in confined systems with homoge- neous SOI,52 and the fact that ᐉsoD⬇2.5ᐉ is barely in the regime of validityᐉsoⰇᐉ of Eq. 共16兲. This leads to smaller bulk spin accumulations and a longer spin-relaxation length Ls=

Dx,ythan the case in which the conditions␰␣,␤Ⰶ1 and LsLare completely fulfilled, and qualitatively explains the renormalization of the effective system length and the bulk spin accumulation. We also note that finite-sized effects lead to deviations from our estimates ᐉ⬇48at3/2

EF/U2 for the elastic mean-free path, and that numerical estimates based on the average inverse participation ratio53 of eigenstates sys- tematically give a larger value for ᐉfor whichᐉ/ᐉsoD⯝0.55.

According to Eq. 共16兲, the suppression of the CISP is independent of the strength of disorder/the elastic mean-free path of the sample, as long as one stays in the diffusive regime. This prediction is supported by our numerical calcu- lations. We find that the spin accumulation stays approxi- mately constant with respect to the electronic mean-free path. This is shown in Fig. 3共a兲. In Fig.3共b兲 we moreover confirm that the CISP is independent of the widthW of the rectangular SOI region for WL. However, we expect a width dependence in the form of a reduction in the CISP upon reducing W, when Dyakonov-Perel spin relaxation31

0 0.5 1 1.5 2

0 0.5 1

Sy/S2DEG

L/DSO3.3 L/DSO7.2 L/DSO14.8

α/β

FIG. 2. 共Color online兲Normalized spin accumulationSy/S2DEG as a function of␣/␤for fixed␤/2a=tD= 0.15t共giving ᐉsoD⬇21a兲, U= 2t 共giving ᐉ⬇8.5a兲, and Fermi energyEF= 0.5t, for different linear system sizeW=L= 70a共red squares兲, 150a共blue diamonds兲, and 310a共gray circles兲. Data are averaged over 5000 disorder con- figurations. The solid lines are the theoretical prediction, Eq.共16兲, with renormalized bulk spin accumulation and system size,S2DEG

fitS2DEG and L→Lfit with ␦fit⬇0.84, Lfit⬇39.3a for L= 70a,

fit⬇0.93,Lfit⬇69.7aforL= 150a, and␦fit⬇0.93,Lfit⬇117.1afor L= 310a. The electric current is in the direction关11¯0兴.

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begins to be reduced and finally suppressed due to the lateral confinement.54,55

IV. CONCLUSIONS

In this work we have studied the electrically induced and spin-orbit-mediated spin accumulation in two-dimensional diffusive conductors with emphasis on finite-size and finite- frequency effects. In the thermodynamic limit of extended systems with共linear兲Rashba and Dresselhaus SOI the Edel- stein magnetoelectric effect gives rise to finite spin accumu- lation up to suppression at the singular point 兩␣兩=兩␤兩. How- ever, in many experimentally relevant systems, additional time, respectively, energy scales come into play, such as in tranport共i兲through mesoscopic samples of finite size,共ii兲in the ac regime, and共iii兲through samples with cubic Dressel- haus SOI. We have shown, both analytically and numerically, that in these situations the singularity in the spin accumula- tion at兩␣兩=兩␤兩 is widened to a dip. This suppression of the

spin accumulation over a finite ␣/␤ range close to ␣=⫾␤ may have interesting implications with regard to other phe- nomena based on the Dyakonov-Perel spin-relaxation mechanism. As but one consequence, finite-size effects may render the spin-field-effect transistor proposed in Ref.32for 兩␣兩=兩␤兩 effectively operative even if the two linear SOI are not precisely equal. This is so because the spin rotation along two different trajectories with the same end points remains the same, even away from兩␣兩=兩␤兩, if the trajectories are not too long. This is reflected in the finite width 兩␣兩−兩␤兩 ⱗ1/mL of the CISP line shape given in Eq.共16兲. Further- more, given that spin helices also emerge from Eqs. 共12a兲 and共13兲,38,39we conjecture that it is either finite-size effects or the presence of a cubic Dresselhaus SOI, or both, that render persistent spin helices excitable some distance away from␣=⫾␤, and thus experimentally observable.

Recent experiments have demonstrated that GaAs quan- tum wells with values of ␣ and ␤ distributed in a signifi- cantly wide range around 兩␣兩=⫾兩␤兩 can be constructed by varying their doping asymmetry and well width.39The phys- ics discussed above is thus of experimental relevance and can be probed as, e.g., in Refs. 56 and57, by investigating CISP optically in several samples with different ratio ␣/␤. We predict a strong reduction in CISP in samples with 兩␣兩

⬇⫾兩␤兩, which can be determined independently, for in- stance, from the spin-helix lifetime39 or photocurrent measurements.58

While the present analysis is based on diffusive charge- carrier motion, it would be interesting to investigate ballistic mesoscopic systems and see whether our results apply there or if our analysis has to be extended. Work along these lines is in progress.

ACKNOWLEDGMENTS

We thank John Schliemann for a careful reading of the manuscript. P.J. thanks the physics department of the Univer- sities of Basel and Geneva for their hospitality at various stages of this project and acknowledges the support of the National Science Foundation under Grant No. DMR- 0706319. D.L. and M.D. acknowledge financial support from the Swiss NF and the NCCR Nanoscience Basel. I.A. is sup- ported by the funds of the Erdal Inönü Chair of Sabanci University. I.A. and K.R. thank the Deutsche Forschungsge- meinschaft for support within the cooperative research center SFB 689, and M.S. acknowledges support from theStudien- stiftung des Deutschen Volkes. I.A. and P.J. express their gratitude to the Aspen Center for Physics for its hospitality.

*mathias.duckheim@unibas.ch

matthias.scheid@uni-r.de

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