Qualiﬁcation of a HV-MAPS produced by TSI

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Qualification of a HV-MAPS produced by TSI

Christoph Blattgerste for the Mu3e collaboration

Heidelberg University

26.03.2019

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MuPix7

MuPix7 is first fully monolithic HV-MAPS developed for Mu3e Well characterized prototype produced by AMS

40×32 pixels with a size of 103×80µm

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Electronics

Amplifier in each pixel

Conversion analog↔ digital at comparator in periphery cell Digital electronics and state machine in periphery

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Motivation

AMS process no longer supported & delivery delays

→ Change to TSI HV as manufacturing process?

↔

AMS H18 andTSI HV based on same IBM HV process Identical design in 180nm HV-CMOS

Expect no significant differences between AMS/TSI beside statistical variations

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Setup

MuPix7 sensors bonded on insert (5 AMS & 4 TSI) Mupix8 v2 PCB with MuPix7 insert (printed circuit board) Data readout via 8b/10b encoded LVDS signal with Stratix IV FPGA

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Breakdown Voltage

I-V-curve for reverse biased diodes

Clear difference between foundries

Higher breakdown allows for higher HV

Hint for TSIs quality

90 91 92 93 94 95 96 97

HV [-V]

10² 10¹ 10⁰ 10¹ 10² 10³ 10⁴

diode current [nA]

300-1-4 AMS 300-1-5 AMS 300-1-6 AMS 300-1-8 AMS 300-1-9 AMS 300-1-2 TSI 300-1-3 TSI 300-1-7 TSI 300-1-10 TSI

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VCO scan

VCO

ChargePump TOVCO VPVCO

VNVCO

Patch signal Reference signal VCO

CLOCK

Divider Dig. Part

Serializer

Readout Timestamps CLOCK

CLOCK/5 SelSlow

CLOCK/10

VPPump

PD

Same shape for TSI and AMS

TSI slightly less jitter (not significant)

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VCO scan

VCO

ChargePump TOVCO VPVCO

VNVCO

Patch signal Reference signal VCO

CLOCK

Divider Dig. Part

Serializer

Readout Timestamps CLOCK

CLOCK/5 SelSlow

CLOCK/10

VPPump

PD

Same shape for TSI and AMS

TSI slightly less jitter (not significant)

same DAC value suitable

for TSI chips ⁰ ⁵ VPVCO [dec]¹⁰ ¹⁵ ²⁰

40 60 80 100 120

jitter [ps]

standard value 300-1-5 AMS 300-1-8 AMS 300-1-9 AMS 300-1-2 TSI 300-1-3 TSI

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Time resolution

Latency: Hit TS - Trigger TS

No significant difference Right tail due to

time-walk

Latency [8ns]

−60 −40 −20 0 20 40 60 80 100

Normalized Entries [1/8ns]

0.2 0.4 0.6 0.8

1 AMS

TSI

= 20.82 [ns]

σ

= 20.71 [ns]

σ

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Power consumption

VDD: digital part VDDA,VSSA: analog pixels

Most power for digital part

Big variances forVDD

VDD VDDA VSSA total

measured voltage 10

20 40 60 80 100120

power consumption [mW]

300-1-4 AMS 300-1-5 AMS 300-1-6 AMS 300-1-8 AMS 300-1-9 AMS

300-1-2 TSI 300-1-3 TSI 300-1-7 TSI 300-1-10 TSI

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Power consumption

TSIVDD about 25%

higher than AMS TSIVDDA,VSSA about 10% higher than AMS TSI has higher power consumption overall

VDD VDDA VSSA total

measured voltage 10

20 40 60 80 100120

power consumption [mW]

300-1-4 AMS 300-1-5 AMS 300-1-6 AMS 300-1-8 AMS 300-1-9 AMS

300-1-2 TSI 300-1-3 TSI 300-1-7 TSI 300-1-10 TSI

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Power consumption for important DACs

DAC current (AMS) [mA] current (TSI) [mA] TSI/AMS

VN2 3.9 4.4 1.13

VNLVDS 8.0 19.1 2.39

VPComp 3.8 4.4 1.16

VPDac 11.5 12.4 1.08

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Power consumption for important DACs

DAC current (AMS) [mA] current (TSI) [mA] TSI/AMS

VN2 3.9 4.4 1.13

VNLVDS 8.0 19.1 2.39

VPComp 3.8 4.4 1.16

VPDac 11.5 12.4 1.08

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LVDS output

Need for high resolution spectrum analyzer

“Eye” as overlap of differential signals VNLVDS affects eye height only

eye height measured correctly

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LVDS scan

Significant difference AMS/TSI

higher “eye” for TSI chips

→ 4×better signal quality for TSI

0 10 20 30 40 50

DAC [dec]

0 20 40 60 80 100

eye height [mV]

default DAC 300-1-7 TSI 300-1-4 AMS

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LVDS power consumption

Significant difference AMS/TSI

better signal quality for TSI needs higher power

→ TSI generates higher signal for same power

0 10 20 30 40 50

DAC [dec]

1 2 3 4 5 6 7

eye height/current [V/A]

default DAC 300-1-7 TSI 300-1-4 AMS

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Summary

comparison

Area AMS TSI

Breakdown HV_AMS ≈93V HV_TSI ≈96V PLL µAMS ≈42.0ns µAMS ≈35.0ns Time res. σ_AMS ≈20.7ns σ_TSI ≈20.8ns Power P_AMS ≈105mW P_TSI ≈129mW LVDS VNLVDSAMS = 15 VNLVDSTSI = 2

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Summary

comparison

Area AMS TSI

Breakdown HV_AMS ≈93V HV_TSI ≈96V PLL µ_AMS ≈42.0ns µ_AMS ≈35.0ns Time res. σAMS ≈20.7ns σTSI ≈20.8ns Power P_AMS ≈105mW P_TSI ≈129mW LVDS VNLVDS_AMS = 15 VNLVDS_TSI = 2

results

Difference only in power consumption

→solvable with lower DAC VNLVDS for TSI chips

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Outlook

future measurements

Signal-to-noise (SNR)

Efficiency measurements from test-beam Evaluation of irradiated chips

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Backup slides

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Mu3e

Search for decayµ⁺→e⁺e⁻e⁺ → cLFV Exclude other decays e.g. µ⁺→e⁺e⁻e⁺νeνµ

P~p= 0 & P mµc²

multiple layers with recurl→ vertex/momentum resolution

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Detector

Pixel layers provide good vertex resolution

Scintillating fibers & tiles with precise timing resolution Recurl through applied magnetic field→ momentum measurement

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Diodes profile

larger depletion zone for stronger electric field depletion over whole diodes profile

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HV scan

scan HV applied to each pixel higher HV→ more hits higher HV→ less noise

0 20 40 60 80

high voltage [-V]

0 1 2 3 4 5 6 7

rate [kHz]

chip:

300-1-2 TSI noise

Fe55

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Pulse shape

Detector temperatures T_min= 0^◦C,

Tmax = 70^◦C Pulse shape changes with temperature Measurements show temperature dependency

→ DAC settings concerned for different

temperatures 0 200 400 600 800

time [ns]

620 640 660 680 700 720 740

threshold [mV]

chip300-1-3 TSI pulse shape for 0.75V injection

0°20°

40°60°

80°

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Injection

quantify injection and source

injection histogram is gaussian

Fe55 histogram is gaussian with left tail tail caused by hits between pixel cells

0 100 200 300 400 500 600 700 800

ToT [ns]

0.0 0.2 0.4 0.6 0.8 1.0 1.2

counts [#]

1e4

gaussian mean = 465.1±2.724 Fe55 mean = 398.4±14.64

injection U=0.75V Fe55

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Injection

varying injection creates different pulse heights readout electronics saturate for higher voltages

0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 injection [V]

0 500 1000 1500 2000 2500 3000

ToT [ns]

300-1-9 AMS 300-1-2 TSI

0 1987 injection [#3975 e] 5962 7950

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Injection

varying injection creates different pulse heights readout electronics saturate for higher voltages

0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 injection [V]

0 500 1000 1500 2000 2500 3000

ToT [ns]

300-1-9 AMS 300-1-2 TSI

0 1987 injection [#3975 e] 5962 7950

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Injection

difference due to statistical variations different absolute values unimportant

0.2 0.3 0.4 0.5 0.6 0.7

injection [V]

0 200 400 600 800 1000 1200 1400

ToT [ns]

Fe55 peak 300-1-4 AMS 300-1-5 AMS 300-1-6 AMS 300-1-8 AMS 300-1-9 AMS 300-1-2 TSI 300-1-3 TSI 300-1-7 TSI 300-1-10 TSI AMS mean TSI mean

0 1987 injection [#3975 e] 5962 7950

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VPPump scan

exponential shape same for TSI and AMS TSI slightly less jitter (not significant) DAC value are suitable

0 10 20 30 40 50 60

VPPump [dec]

40 60 80 100 120

jitter [ps]

default value 300-1-5 AMS 300-1-8 AMS 300-1-9 AMS 300-1-2 TSI 300-1-3 TSI

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Time resolution

Low delay

High time resolution AMS chips perform better

no significant differences

300-1-2 TSI300-1-3 TSI300-1-7 TSI300-1-10 TSI300-1-4 AMS300-1-5 AMS300-1-6 AMS300-1-8 AMS300-1-9 AMS sensor[#]

2 0 2 4 6 8 10 12

delay [ns]

mean AMS mean TSI

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Time resolution

Low delay

High time resolution AMS chips perform better

no significant differences

300-1-2 TSI300-1-3 TSI300-1-7 TSI300-1-10 TSI300-1-4 AMS300-1-5 AMS300-1-6 AMS300-1-8 AMS300-1-9 AMS sensor[#]

22.0 22.5 23.0 23.5 24.0

Time resolution [ns]

sigma AMS sigma TSI