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Does Electron Delocalization In fl uence Charge Separation at Donor − Acceptor Interfaces in Organic Photovoltaic Cells?

Frank-Julian Kahle, Christina Saller, Selina Olthof,§ Cheng Li, Jenny Lebert,Sebastian Weiß, Eva M. Herzig, Sven Hüttner, Klaus Meerholz,§Peter Strohriegl, and Anna Köhler*,†

Soft Matter Optoelectronics, Department of Physics, University of Bayreuth, 95447 Bayreuth, Germany

Macromolecular Chemistry I, Department of Chemistry, University of Bayreuth, 95447 Bayreuth, Germany

§Department of Chemistry, University of Cologne, 50939 Cologne, Germany

Herzig Group, Munich School of Engineering, Technical University Munich, 85748 Garching, Germany

Dynamics and Structure FormationHerzig Group, Department of Physics, University of Bayreuth, 95447 Bayreuth, Germany

*S Supporting Information

ABSTRACT: We use bilayer devices with a series of three fullerene acceptors differing in order and intermolecular coupling to systematically explore the influence of electron delocalization in the acceptor phase on the dissociation efficiency of charge transfer states. Structural information from GIWAXS measurements is combined with the results of optical and electrical characterization as well as theoretical modeling.

Our results indicate that an increase in CT-dissociation eciency is directly coupled to an enhancement in electron delocalization that is particularly prominent for C60 which forms crystalline domains. Therefore, our results substantiate the concept of delocalization of electrons taking a positive role in the charge separation process, and of acceptor crystallinity being crucial in this respect.

I. INTRODUCTION

Organic solar cells (OSCs) have been an interesting topic to many research groups for decades now and especially gained remarkable attention again in recent years, as devices based on polymeric donors and small molecular acceptors have eventually reached efficiencies of more than 10% and even up to 14%.1−5Much effort has been put into molecular design and device optimization, particularly with respect to layer structure and morphology. Yet, the fundamental mechanisms enabling such high eciencies are still not fully understood.

While the charge extraction process after the initially generated electronhole (eh) pairs are separated into free charge carriers is fairly well investigated,6−11the exact mechanism by which Charge Transfer (CT) states are split at the donor−

acceptor interface is still under debate. These states can be described as Coulombically bound (and therefore correlated) holes and electrons residing on neighboring donor and acceptor sites, respectively. In a classical picture, the Coulomb binding energy of a CT state would be around 500 meV,12,13 assuming a typical dielectric constant of 3−4 and a nearest neighbor separation of 1 nm, which is far above the available thermal energy of about 25 meV at room temperature.

Nevertheless, there are reports showing that internal quantum eciencies approaching 100% are possible in some organic solar cell systems,14,15raising the question how the Coulomb barrier can actually be overcome.

Several factors influencing the efficiency of CT-state dissociation have been proposed and studied quite extensively to date, including aspects like mobility,16,17 entropy,12,18−20 driving force,12,21−23 and excess energy.14,21,24 Yet, another factor that has recently become a hot topic is the role of delocalization in the dissociation process of CT states, especially with respect to the electron in the acceptor phase.25−30 The basic idea behind this concept is that delocalization implies a reduction of the CT binding energy and an easier separation of electron and hole over larger distances.31,32 For holes being transported along a polymer chain, this is comparably easy to understand, because a high coupling strength along the conjugated segments of a polymer chain implies a larger bandwidth associated with an exciton or a charge carrier, meaning that such an excitation, be it an exciton or a charge carrier, can be coherently coupled (and thus delocalize) over several repeat units.32A similar behavior is not so obvious for small molecular acceptors as the coupling between individual adjacent molecules is expected to be smaller (even if they formed a molecular crystal).33 This in turn results in a bandwidth that is usually smaller than or comparable to the energetic disorder in the system.

Consequently, transport in these systems is rather expected

Received: July 13, 2018 Revised: September 4, 2018 Published: September 4, 2018

Article pubs.acs.org/JPCC Cite This:J. Phys. Chem. C2018, 122, 2179221802

© 2018 American Chemical Society 21792 DOI:10.1021/acs.jpcc.8b06429

J. Phys. Chem. C2018, 122, 21792−21802

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to be incoherent.34 While delocalization of the hole in the donor has been shown in several conjugated polymer systems as well as in crystalline donor materials and is accepted to aect the CT-dissociation eciency,25,32 there is no full consensus up to now, whether electron delocalization is of similar significance. Some groups claim that delocalization of the electron in the acceptor is less important than of the hole in the donor,25,26of equal importance,11,27,28,35,36

or even more important.29 Others in turn state that only one of the components needs to feature a certain degree of delocaliza-tion.30A very recent theoretical study on the general eect of delocalization on the barrier height for charge separation by Gluchowski et al. even suggested that, from a thermodynamic point of view, delocalization would even increase the dissociation barrier.37

With our current work, we aim to contribute to the clarication of this issue. We investigated bilayer solar cells as model systems to study CT characteristics and dissociation at a well-dened interface, thereby reducing morphology related eects such as bimolecular recombination, percolation problems, or varying domain sizes as present in bulk heterojunction systems. For the donor material, we chose a cross-linkable derivative of the well-known polymer PCDTBT for all investigated samples (PCDTBTOx,Figure 1a). As the functional group for cross-linking is attached to the side chain, we expect the properties of the main chain to remain unaffected.38The use of a cross-linkable donor allowed us to easily fabricate multilayer devices from solution without having to use orthogonal solvents. Furthermore, cross-linking the

donor layer effectively reduces interdiffusion of the sub-sequently deposited acceptor.39This results in a better defined donor/acceptor interface so that the layer structure is actually closer to an actual bilayer system, which facilitates theoretical modeling approaches. The use of the amorphous polymer PCDTBTOx as a donor additionally has the advantage that energy levels are likely to change little when in contact with different acceptor materials.40

As acceptors we chose a series of three fullerenes (C60, PCBM, ICBA) that feature a varying number of additional covalent bonds to the cage and dierent degrees of crystallinity and order. This should vary the degree of intermolecular coupling between acceptor sites and therefore also the degree of delocalization within the acceptor phase,27,29,41which is also reected in dierent bulk electron mobilities of the respective materials.27 Furthermore, the chosen acceptors feature an energy level cascade (Figure 1b) which allows tuning the CT energy of the bilayer system.21

By performing photophysical, electrical, and structural investigations and combining the results with theoretical modeling, we find that higher structural order and intermolecular coupling in the acceptor phase substantiate the eect of delocalization of the CT state that enhances the CT-dissociation efficiency. A significant reduction of the eective mass of the CT state due to electron delocalization in the acceptor is found mainly with C60 which forms crystalline domains.

Figure 1.(a) Structure formula of the cross-linkable PCDTBTOx derivative (donor) as well as the structures of the three fullerene acceptors used in the bilayer solar cells. (b) Energy level diagrams for the donor and the three investigated fullerene acceptors. The values for ionization energies (IE) and electron affinities (EA) were measured via UPS and IPES, respectively. (c) Work functionsΦand calculated energy level displacement ΔΦin bilayer solar cells as determined via Kelvin-Probe measurements.αdenotes the fractional interfacial dipole strengths calculated fromΔΦas detailed in the text.

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DOI:10.1021/acs.jpcc.8b06429 J. Phys. Chem. C2018, 122, 21792−21802 21793

II. EXPERIMENTAL SECTION

Materials and Sample Preparation. Cross-linkable PCDTBTOx was synthesized by C. Saller. The detailed synthesis route is given in the Supporting Information.

Molybdenum trioxide (MoO3), Bathocuproine (BCP), and ICBA were purchased from Sigma-Aldrich. The product number of ICBA is 753955, and it contains a mixture of isomers. C60and PCBM were purchased from ADS and TCI, respectively. All materials were used as received.

For solar cell measurements, we used cleaned patterned ITO glass substrates that were additionally covered with a patterned layer of photoresist to avoid spurious electrical breakdown eects at the electrode edges. After treating the substrates for 2 min inside an oxygen plasma chamber, a 6 nm layer of MoO3is vapor deposited using a shadow mask. After that, a 14 nm layer of PCDTBTOx is spin-cast on top inside a glovebox from a 3 g/L chlorobenzene solution (99.8% anhydrous, oxygen free).

Cross-linking was then performed by cationic ring opening polymerization. Therefore, samples were transferred to an argon atmosphere and exposed to trifluoroacetic acid (TFA) vapor for 15 min at 100°C. After this treatment, the samples were transferred to a vacuum chamber and kept in vacuum for 30 min at 90°C, in order to remove possible volatile remnants of TFA. Subsequently, a 30 nm acceptor layer was deposited either by vacuum deposition (C60) or by spin-coating (PCBM, ICBA) from a 5 g/L chloroform solution (99.8% anhydrous, oxygen free). In the end, BCP and Al are evaporated on top as a cathode. Samples for electroabsorption measurements were prepared the same way, but encapsulated to be measured under ambient conditions. In the case of the photoelectron spectroscopy and Kelvin-Probe measurements, samples were also prepared according the above-mentioned protocol but without a cathode and with thinner acceptor layers.

For GIWAXS measurements, we used Si wafers as substrates. These were cleaned for 15 min in a piranha etch bath heated to 80°C and subsequently rinsed with deionized water to remove acidic remnants. After cleaning, a 30 nm layer of PCDTBTOx was spin-cast on top from a 6 g/L chlorobenzene solution (99.8% anhydrous, oxygen free) and cross-linked according to the procedure described above.

Following this, a 30 nm acceptor layer was deposited again as described above.

GIWAXS. Grazing incidence wide-angle X-ray scattering (GIWAXS) was carried out at the Sirius beamline of Soleil at 8 keV and a sample detector distance of 32.5 cm using a Pilatus 1M detector. The incident angle was set at 0.18°to penetrate the full bilayer. The data is flattened by an exponential background subtraction, and cuts are obtained using the GIXSGUI software.42

Photoelectron Spectroscopy (PES) /Kelvin Probe. UV-photoelectron spectroscopy (UPS) measurements were done in ultrahigh vacuum using a helium based monochromic microwave UV lamp (VUV 5000, Scienta Omicron). The measurements were performed using the much weaker He Iβ excitation at hν = 23.087 eV. This was done in order to minimize the light intensity illuminating the samples, which could lead to the creation of a photovoltage at the donor/

acceptor interface and an unwanted shift of the vacuum levels.

Furthermore, after the UPS measurements, the work functions were checked via a UHV based Kelvin-Probe system (McAllister KP6500) in the dark; this showed excellent agreement with the UPS measurements (within 20−40

meV). Finally, the LUMO levels were probed via inverse photoelectron spectroscopy using a low energy electron gun (ELG-2, Kimball) and a band-pass photon detector (IPES2000, Omnivac).

Photocurrent and Electroluminescence Spectrosco-py.External Quantum Eciency (EQE) and current voltage (IV) measurements were performed under short circuit conditions using either a Keithley source-measure unit (SMU 238) and monochromatic illumination from a 450 W xenon lamp or, for more sensitive measurements, a Lock-In (SR830) at a reference frequency of 130 Hz and monochromatic illumination from a 150 W tungsten lamp (Osram). The sample was kept in an appropriate vacuum condition sample holder at room temperature. Absorption proles used to convert EQE to IQE were calculated via the transfer matrix algorithm using the code provided online free of charge by McGehee and co-workers.43nandkvalues for the calculation were taken either from the library provided by McGehee and co-workers or from the literature.43−48

In order to convert voltage-dependent measurements of the EQE into aeld-dependent data set, the internaleld in the active layer was taken as (VbiV)/d, wheredis the thickness of the active layer,Vis the applied voltage, andVbiis the built-in voltage. The latter was approximated by the compensation voltage, i.e., the voltage at which the photocurrent vanishes.49 The photocurrent is calculated from the difference between the current with and without illumination.

Electroabsorption.The light source was installed within a monochromator illuminator (Oriel). The light going through the monochromator (SPEX 1681B, Horiba Scientic) illuminated the device and was reected back from the aluminum electrode onto a photodiode (HUV-4000B, EG&G Judson). A dual channel lock-in amplier (SR 830 from Stanford Research Systems) was used to bias the device with a DC and an AC voltage and monitored the AC amplitude of the Electroabsorption (EA) signal from the photodiode. In parallel, the DC amplitude of the EA signal was recorded with a digital multimeter (HP34401A). For all the electrical experiment, the ITO electrode was connected to the ground and external voltages were applied to the Al electrode.

III. RESULTS

The role of electron delocalization in the CT-dissociation process will be inferred from the analysis of external and internal quantum efficiency spectra as well as theoretical modeling ofeld-dependentIVmeasurements. For a profound interpretation of the respective data, some fundamental information about the investigated systems is crucial. This includes knowledge about energy levels, interface energetics, and structural properties of the samples.

Energetics and Structural Properties. In order to address energetics, we performed UPS, IPES, and Kelvin-Probe measurements. The resulting energy levels for ionization energy (IE) and electron anity (EA) for PCDTBTOx and the three acceptors C60, PCBM, and ICBA are depicted in the schematic energy level diagram inFigure 1b. For further details regarding the photoemission spectra, the reader is referred to the Supporting Information. As expected and in agreement with the literature, wefind a downward energy level cascade, i.e., increasing EA values, in the series ICBA > PCBM >

C60.50−52The same trend is observed for the IE. The electrical band gapEgof our donor polymer is around 2.3 eV.

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Work function valuesΦand interfacial vacuum level shifts ΔΦdetermined from Kelvin-Probe measurements (Figure S3) are summarized in the table inFigure 1c. Wefind that, within the accuracy of the measurement (1020 meV, seeSI), the work function of PCDTBTOx did not change when covered with C60, indicating vacuum level alignment. In contrast to this, work function shifts of 130 and 140 meV for PCBM and ICBA are observed, respectively, indicating that Fermi-level pinning at the polymer/fullerene interface occurs for a work function of the fullerenefilm below∼4.9 eV. This implies the presence of ground state interfacial dipoles for PCBM and ICBA. The corresponding fractional interfacial dipole strengths αcan be calculated from the measured vacuum level shiftsΔΦusing the Helmholtz equation for interfacial dipoles. The strength of an interfacial dipoleαcan be calculated fromε0εrΔΦ=pσ, where

·10−3for C60, PCBM, and ICBA, respectively.32We attribute the reduced interfacial dipole for the C60 to its higher symmetry.53

To characterize the order present in the three different types of fullerene top layers, grazing incidence wide-angle X-ray scattering (GIWAXS) experiments were carried out. This scattering technique is well suited for the examination of statistically averaged information on nearest neighbor ordering in thinlms or thin multilayers. While highly ordered crystal structures will result in sharp strong peaks, such peaks will generally broaden with increasing disorder since the average separation of the scattering objects becomes less defined.

The GIWAXS pattern of the polymer layer shows no signicant order throughout thelm volume which is expected for the disordered PCDTBTOx bottom layer. The observed peaks in the 2D data can therefore be attributed to the respective fullerene layers. For all three cases, isotropic powder diffraction rings are observed, indicating no preferential orientation for all fullerenes.Figure 2shows the azimuthally

integrated intensity from 0°to 90°with increasing scattering vectorq. The highest order is found for the evaporated C60top layer. Peaks atq= 0.77, 1.25, and 1.41 A−1are found in good agreement with the literature for C60 in polycrystalline fcc configuration.54,55For PCBM wefind broad scattering rings at q = 0.70 and 1.33 A−1, indicating short-range order but no

presence of larger crystals in agreement with the literature.56 The scattering signal of the ICBA/PCDTBTOx bilayer also shows such a nearest neighbor ordering but is even broader in width than PCBM, indicating that the statistically averaged separation of ICBA is less well-dened than for PCBM.

Additionally, the peak center of the main peak shifts to slightly smaller q-value (1.29 A−1), implying an on average larger separation between ICBA than PCBM molecules. Since the fullerene top layers are prepared with the same thickness (30± 1 nm), the decreasing intensity of the signals shown inFigure 2 further indicates that the amount of ordered fullerenes in the layer decreases from C60 via PCBM to ICBA. These observations regarding crystalline order and average inter-molecular spacing suggest that the strength of the intermo-lecular coupling within the acceptor phase is likely to decrease in the series C60> PCBM > ICBA, as the electronic coupling between adjacent fullerenes decreases exponentially with increased cagecage distance.27,29,57−59

Photocurrent Spectroscopy and Charge Transfer States. Having claried fundamental properties of the used materials and material combinations, we now turn to the study of organic solar cells.Figure 3a exemplarily shows the EQE spectra of a bilayer device with a C60acceptor layer on top of the cross-linked PCDTBTOx donor, together with spectra of single layer cells comprising only the donor or the acceptor (solid lines). The EQE was measured under short circuit conditions. A more detailed view of the sub-band-gap region relevant to direct CT absorption is shown inFigure 3b for all the dierent acceptors. In order to get a qualitative idea which of the two components contributes to the EQE at which energy, the absorption for the PCDTBTOx and C60layers is also shown (dashed lines). Absorption profiles for PCDTBTOx and the fullerene were calculated using the transfer matrix algorithm.43 n and kvalues for the dierent layers of the solar cell were taken from the literature.43−48The accessible range of these values limited the calculation down to about 1.55 eV. The respective spectra for PCBM and ICBA can be found in the Supporting Information(Figure S4). The qualitative aspects are the same for all three fullerenes.

InFigure 3a, we see that the donor polymer itself (gray line) hardly contributes to the EQE, indicating that excitons are not split efficiently within the bulk of the donor. In contrast to that, single layer devices of C60(dark red line) show a considerable EQE for energies above 2.25 eV, which is identified as the autoionization threshold of fullerenes, where bulk CT states can be split.60,61This contribution is also present in the bilayer devices (light red line). The autoionization eciency is smaller for PCBM and ICBA (see theSupporting Information). Below 2.25 eV, there is no signicant intrinsic exciton dissociation in the neat materials, as can be inferred from the EQE of single layer devices. Nevertheless, we observe a considerable EQE in this region in the case of bilayer devices. Therefore, the EQE below 2.25 eV can be assigned to dissociation at the donor−

acceptor interface.

FromFigure 3b, we see that the overall EQE increases in the order ICBA < PCBM < C60. To account for dierences in absorption or reflection, we calculated the internal quantum

FromFigure 3b, we see that the overall EQE increases in the order ICBA < PCBM < C60. To account for dierences in absorption or reflection, we calculated the internal quantum