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Spin-Orbit Coupling in Gyrotropic Quantum Wells by Far-Infrared Radiation Induced Spin-Galvanic Effect

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Spectroscopy and Material Properties M1O.l

Spin-Orbit Coupling in Gyrotropic Quantum Wells by Far-Infrared Radiation Induced Spin-Galvanic Effect

S.D.

Ganichev,

V.V

Bel'kov*, Petra Schneider, S. Giglberger, Ch.

Hoffmann, and W.

Prettl Universitat Regensburg, D 93040 Regensburg, Germany

Abstract: The Rashba effect, whose experimental ac- cess is usually masked by the Dresselhaus effect, al- lows manipulation of spins in semiconductor spintron- ics. Based on the far-infrared radiation induced spiu- galvanic effect, we present a unique way to separate both types of spin-orbit coupling.

Introduction

The manipulation of the spin of charge carriers in semi- conductors is one of the key problems in the field of spintronics. In the paradigmatic spin transistor, e.g. proposed by Datta and Das [l], the electron spins injected from a ferromagnetic contact into a two- dimensional electron system are controllably rotated during their passage from source to drain by means of the Rashba spin-orbit coupling 121. The coefficient a , which describes the strength of the Rashba spin- orbit coupling, and hence the degree of rotation, can be tuned by gate voltages. This coupling stems from the inversion asymmetry of the confining potential of two-dimensional electron (or hole) systems. In addition to the Rashba coupling, caused by structure inversion asymmetry (SIA), also a Dresselhaus type of coupling of strength p contributes to the spin-orbit interaction.

The latter is due to bulk inversion asymmetry (BIA) including phenomenologically inseparable interface in- version asymmetry (IIA) 131. Both, Rashba and Dres- selhaus couplings result in spin-splitting of subbands in k-space (Fig. 1) and give rise to a variety of spin de-

Y

Figure 1: Schematic 2D band structure with k-linear terms for Cz. symmetry for different relative strengths of SIA and BIA and the distribution of spin orienta- tions at the 2D Fermi energy: (a) shows the case of only Rashba or Dresselhaus spin-orbit coupling and (d) represents the case of simultaneous presence of both contributions. Arrows indicate the orientation of spins.

H = h2k2/2m'fHso contains the Rashba term as well as the Dresselhaus term according to

ri,o =a(&, - +.)

+

P ( . A - U&,) (1) where k is the electron wavevedor and U is the vec- tor of the pauli matrices. The z-axis is along pendent phenomena.

However, usually it is impossible to extract the relative

contributions of Rashba and Dresselhaus terms to the the [lOO].direction, along [ole], and is the spin-orbit coupling. To obtain the Rashba coefficient direction.

a , the Dresselhaus contribution is normally neglected. The resulting energy dispersion E(k) and contours of Here we show that angular dependent measurements of constant energy in the k,&, plane for different a and the spin-galvanic photocurrent in the far-infrared [4]

0

are illustrated in ~ i1, ~por .cI

#

0, p = 0 and LI = 0, allow to separate contributions due to Dresselhaus and p

+

0 the dispersion has the Same shape and consists of h h b a terms. w e use of the fact that these terms two parabolas shifted in all directions (Fig. la). How- contribute differently for particular crystallographic di- ever, -hba and Dresselhaus terms result in a differ.

rections. ent pattem of the eigenstate's spin orientation. The

distribution

Of

this spin orientation is obtained by di- agonalizing H s o in Eq. (1). In the presence of both Rashba and Dresselhaus spin-orbit couplings, relevant for Cz. symmetry, the [I101 and the [ l l O ] axes become strongly non-equivalent yielding an anisotropic disper- sion sketched in Fig. 1 d,e.

Spin-orbit interaction

We consider quantum wells (QWs) of zinc-blende strnc- ture grown in [OOl] direction. Fsr the corresponding CZ,, symmetry the spin-orbit part H s o of the Hamiltonian

0-7803-8490-3/04/$20.00 @OM IEEE 167

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M1O.l Spectroscopy and Material Properties

Experimental

The ture on experiments (OOl)-oriented were n-type carried InAs/Alo.sG%,,Sb out at room tempera- single P

&

:s

+&

/(Q) .'.

QWs of 15 nm width having C2, point symmetry. The i

free carrier densities and mobilities at room tempera- ice) ...

>. P...

~

a

~, lllllaoi $02

ture were about 1.3. 1OI2 cm-2 and

=

2. lo4 cm2/(Vs),

respectively. Eight opposite Pairs of contxts on each Figure 2: Angular dependence of the spin-galvanic cur- sample allow to probe the photocurrent in different di- rent (a) and geometry of the experiment (b and c).

rections (see Fig. 2b). For optical spin orientation we use a high power pulsed molecular far-infrared NH3

laser at = 148 pm. Circular of the lin- in Fig. 2c. This excess spin polarization Sll leads to an early polarized emission is obtained by a X/4 quartz increase of the population of the corresponding spin-

plate. polarized states. Due to asymmetric spin relaxation an

The photocurrent j s , ~ is measured in unbiased S t N C - electric Current reSdtS [4].

tures via the voltage drop acr'oss a 50 0 load resistor in a To obtain the Rashba- and Dresselhaus contributions closed circuit configuration [5]. It is detected for right the spin-galvanic effect is measured for a fixed orients- (,,

+) and left ( 0 - ) handed circularly polarized r d i = tion of SI, for all accessible directions 0 (see Fig. Zc).

tion. The spin-galvanic current j s , ~ , studied bere, is According to Eq. (2) the current j~ always flows Per- extracted after eliminating current contributions which pendicularly to the spin Polarization SII~ and J'D en- are helicity independent ~ S C E =

(&+

- jm-) 12. closes an angle -2'p with SII. Here 'p is the angle he- tween SI, and the z-axis. Then, the current component

Results and Discussion

along &y direction given by angle Q can be written as

a sum of the projections of j , and j , on this direction We employ the spin-galvanic effect to extract the ratio

of the Rashba and the Dresselhaus contributions. The ~ s G E ( Q ) = j ~ c o s ( 8 + ' p ) + j ~ s i n ( 0 - ' p ) . (4) spin-galvanic current is driven by the electron in-plane Evaluating the measurements using this yields average spin SI, according to [4, 51: immediately the ratio between Rashba and Dresselhaus terms. The best value obtained here is j R / j D = a/@ = 2.1 in a good agreement to theoretical results [7] which predict a dominatina Rashba sdn-orbit condine for ( 2 )

Therefore, the spin-galvanic current j s m for a certain direction of SII consists of Rashba and Dresselhaus cou- pling induced currents, j , and j , (see Fig. Za). Their m a g n i t u d e s a r e j ~ a alSlll,jo a@ISl,I andtheirratio is

i R / j D (3)

The non-equilibrium in-plane spin polarization Si1 is prepared as described recently [4]: Circularly polarized light at normal incidence on the QW plane polarizes the electrons in the lowest conduction subband resul- ting in a monopolar spin orientation in the z-direction (Fig. 2b). An in-plane magnetic field ( B = 1 T) rotates the spin around the magnetic field axis (precession) and results in a non-equilibrium in-plane spin polarization SII cx WLT., where W L is the Larmor frequency and rS

is the spin relaxation time. In the range of the applied magnetic field strength the spin-galvanic current in the present samples at room temperature rises linearly with B indicating W L T ~

<

1 and, thus, the Hade effect is not present. The angle between the magnetic field and SII in general depends on details of the spin relaxation process. In the InAs QW structures investigated here, the isotropic Elliott-Yafet spin relaxation mechanism dominates [6]. Thus the in-plane spin polarization SI, of photoexcited carriers is always perpendicular to B and can be varied by rotating B around z as illustrated

-

. -

inAs QWs.

Financial support by the DFG is gratefully acknow- ledged.

* Pemanent address: A.F. Ioffe Physico-Technical In- stitute, lg4OZl st. PeteTsbuTg, Russia

References

(1990).

[l] S. Datta, and B. Das, Appl. Phys. Lett. 56, 665

[2] Y.A. Bychkov, and E.I. Rashba, Pis'ma ZhETF 39, 66 (1984) [Sov. JETP Lett. 39, 78 (1984)l.

[3] U. Rossler, and J. Kainz, Solid State Commun.

121, 313 (2002).

[4] S.D. Ganichev, E.L. Ivchenko, V.V. Bel'kov, S.A. Tarasenko, M. Sollinger, D. Weiss,

W. Wegscheider, and W. Prettl, Nature (London) 417, 153 (2002).

[5] S.D. Ganichev, and W. Prettl, J. Phys.: Condens.

Matter 15, R935 (2003), and references cited therein.

[6] N.S. Averkiev, L.E. Golub, and M. Willander, J. Phys.: Condens. Matter 14, R271 (2002).

[7] G. Lommer, F. Malcher, and U. R k l e r , Phys.

Rev. Lett. 60, 728 (1988).

168 2004 Joint 29'" Int. Conf. on Infrared and Millimeter Waves and 12'" Int. Conf. on Terahertz Electronics

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