CEA-FZJ Meeting LETI contribution
19-20 January 2012
C.Reita – N.Gambacorti – C.Prummel
A LETI program division sustained by a 200‐300mm prototyping line
Nanotech 300 CMOS 200 mm
200 and 300mm Si capabities 8,000 m² clean rooms Continuous operation
Open platform for 3D
Innovative Device Laboratory
12 Patents and 50 Scientific Papers in 2010 300mmTechnologies
• Research Focus
Process integration for ultra‐scaled CMOS New transistor architectures
New substrates evaluation
3D monolithic integration for More Moore and More than Moore
New materials for beyond CMOS
• Applications
Low‐power / High‐perf CMOS ICs Sensors co‐integrated on CMOS
• Market Areas
Wireless
Microprocessors / Microcontrollers
Thierry POIROUX
Head of Innovative Device Laboratory
Key figures
Main Industrial Partners
glue
Main International cooperations
(b) (c) (d)
(e)
200nm Rectangular Circular Si NW
Si NWs (a) SiN
NWs HM
(001)
(f) 2nm
Si NW
(b) (c) (d)
(e)
200nm Rectangular Circular Si NW
Si NWs (a) SiN
NWs HM
(001)
(f) 2nm
Si NW
Tsi~10 nm TILD~25nm LG~50 nm
THFO2~2.5 nm TiN
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tension de sortie VOUT (V)
Tension d'entrée V
IN (V) pMOS GeOI
nMOS SOI
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tension de sortie VOUT (V)
Tension d'entrée V
IN (V) pMOS GeOI
nMOS SOI
ION[μA/wire]
IOFF[A/wire]
10-10 10-11
10-13 10-7
60 40
0
pFET
20 10-12
10-8 10-9
Rectangular Si NWs
C-strained SiGe NWs
70 50
30 10
Un-strained SiGe NWs
(Wtotal=12.0µm)
(Wtotal=11.8µm) (Wtotal=12.3µm)
VDD=1.2V LG: 80 to 640nm
ION[μA/wire]
IOFF[A/wire]
10-10 10-11
10-13 10-7
60 40
0
pFET
20 10-12
10-8 10-9
Rectangular Si NWs
C-strained SiGe NWs
70 50
30 10
Un-strained SiGe NWs
(Wtotal=12.0µm)
(Wtotal=11.8µm) (Wtotal=12.3µm)
VDD=1.2V LG: 80 to 640nm 0.5
1 1.5 2 2.5 3 3.5 4
10 20 30 40 50 60
AVt=σΔVt x sqrt(W.L) (mV.um)
Gate length L (nm) Bulk platform
FDSOI MOSFETs
ST 65nm ST 45nm
IBM 90nm
Intel 45nm Intel 65nm
Leti [VLSI'10]
[IEDM'08]
IBM [IEDM'09]
[IEDM'07]
IBM alliance [IEDM'08]
-0.3 0.0 0.3 0.6 0.9 10-14
10-12 10-10 10-8 10-6 10-4 10-2
ti=1s
adjusted V
T
nMOS
#A L=50nm e- inj.
h+ inj.
VBi=-50V, V
Di=1.5 to 3.2V VBi=50V, VDi=0.9 to 1.5V
ID@ VD=50mV (A)
VG(V)
Innovative Device Lab 2011 Projects (Selection)
• Transistor integration on innovative / engineered substrates
• High electrostatic control / low variability FDSOI technology for sub-20nm nodes
Industry
Industry Industry
Industry
Roadmap 2011 – Nanoelectronics
• Market Analysis, Solution pursued
Low power logicapplications → thinfilm technologies scalingand innovativedevicearchitectures Support to industry→ expertise, short loops technologycapitalization
2016 2014
2012 2010
FDSOI
Trigate / Nanowires Monolithic 3D
ModuleDevelopment
Strain techniques scaling and innovative substrates
Gate last 20nm Gate last 14nm Gate last 10nm
Self-aligned contacts 14nm Self-aligned contacts 10nm Source/drain optimization and scaling
28nm LETI C2 transfer
20nm LETI/ANT C2 transfer
14nm LETI/ANT C2 transfer 10nm LETI/ANT
MPW 20/65 MPW 20/28 MPW 14/28 MPW 10/20 e-1TDRAM eval e-1TDRAM optimization and co-integration
Trigate process dvpt 14nm device and circuit demo 10nm device and circuit demo Stacked nanowire dvpt 14nm circuit demo 10nm circuit demo Nanowires for more than Moore: heterogeneous integration of systems
3D mono for memory/CMOS and neuromorphic Cold CMOS 20nm device and circuit demo 14/10nm demo
Collaborations with FZJ
• Longstanding partnership in FP6, FP7, MEDEA, CATRENE projects
• NANOCMOS, PULLNANO, STEEPER (running)
• SILONIS, DECISIF, REACHING22 (running)
• Hiper‐AN (submitted)
• some less successful submission in CATRENE (Industrial and political problems, not scientific quality)
• Excellent complementarity
• FZJ material research, basic devices
• CEA‐LETI integration on industrial flow, validation in circuits, complex devices
• Topics already shared
• strain, nanowires, tunnel FETs, epitaxy
Energy & Power Devices Lab
1 Common Lab with Industrials 200mmProcess
• Research Focus
Materials and Process Development for :
‐ advanced PV Cells (support for CEA Ines)
‐ Si power devices
‐ GaNpower devices
Devices demonstrators for power converters
• Applications
Hybrid/electric cars
Switched‐mode power supply PV converters and safety systems
• Markets Areas
Automotive
Servers/desktops/laptops Photovoltaic
Thierry BILLON
Head of Energy & Power Devices Lab
Key figures
Main Industrial Partners
Advanced Substrates Lab
8Process Engineers and Technicians 1 Common Labs with Industrials
15 Patents and 30 Scientific Papers in 2010 From 50mm to450mmProcess
• Research Focus
Materials and Process Development
Direct bonding, ion implantation, mechanical thinning
Thin Layer transfer using the Smart Cut™/ Smart Stacking™ technologies
• Applications
Low power electronics, power devices Photovoltaic, energy storage
3D circuits, RF filters, MEMS, LEDs
• Markets Areas
Consumer electronics
Energy production/storage, Lightning Imaging and sensing
Entertainment
Thomas SIGNAMARCHEIX
Head of Advanced Substrates Lab
Key figures
Main Industrial Partners
Micro‐System Components Section
68 Engineers and Technicians 21 PhD students and post docs 5 Common Labs
200mmand 300mm technologies
• Missions
‐
Design & Develop Micro System Components on Silicon wafers in strong partnership withinternational industrials
‐
Develop the associated Design Kits• R&D Focus
‐
Micro Actuators & Micro Sensors‐
RF & Passive Components‐
MEMS Packaging‐
Energy Harvesting‐
Design Kits• Markets Areas
Consumer, Mobile Phone, Automotive, Health, Space, Defense
Marc Aïd
Head of the Division
Key Figures
Main Industrial Partners
CMOS NEMS
Micro‐Actuator Components Lab
2 Common Labs with Industrials 200mmand 300mmProcess
• Research Focus
Innovative actuators design and development Piezoelectric and Electrostatic actuation
Materials and Process Development Energy harvesting
Wafer Lever Packaging for MEMS
Vacuum measurement in packaged MEMS
• Applications
Inkjet head technology Imaging: adaptive focus lens
Acoustic: digital MEMS loudspeakers
Medical: energy harvesting in human body, micro‐pump
StéphaneFANGET
Head of
Micro‐Actuator Components Lab
Key figures
Main Industrial Partners
• Areas
Consumer, Audio, Gaming, Medical, Autonomous sensors
MEMS Sensor Lab
25 Years background on MEMS sensors 14 Patents in 2010
7 Industrial transfers 2 Startups
Research Focus
Inertial Sensor : Accelero, gyroscope
Membrane based sensor: cMUT, Pressure
Magnetic sensor : GMR, TMR, magnetometer
Gaz sensor: NEMS‐sensor, Mass‐Spec, humidityCore technologies
MEMS, NEMS, CMOS integration, Si‐nanowire,…
Magnetic and Piezoelectric material integrationKey competencies
MEMS Simulation and Design
Process development & process integration
Magnetic material development
Sensor characterizationPhilippe ROBERT
Head of MEMS Sensor Lab
Key figures
Main Industrial Partners
Narciso GAMBACORTI – LETI / DTSI
Nanocharacterization Program Manager
Nanocharacterization CEA/LETI
X Ray X Ray
Anaysis OpticalOptical
Electron Microscopy
Electron Microscopy Contamination
Contamination
Scanning Probe Scanning
Probe
Competence Centers
Surface Analysis Surface Analysis
Ion Beam Analysis Ion Beam
Analysis
Thickness Composition
Thickness Composition
Morphology Observation Morphology Observation
Sample Preparation Sample Preparation
MEIS TOF-SIMS
SIMS
VPD-TXRF ICPMS
Ellipso XPERT
MXPS X-PEEM
HR-STEM FIB-DB
Polishing
PFNCPFNCPFNC PFNC
PFNC PFNCPFNC PFNC
PFNCPFNCPFNC PFNC PFNC PFNCPFNC PFNC
NMRNMR
In-line FIB SEM AFM
PFNCPFNCPFNC PFNC
HR DNP/NMR SS
NanoCharacterization @ CEA‐Leti Capabilities
State‐of‐the‐art techniques
> ATR and MIR‐FTIR Photometer
> EUV Ellipsometer
> Focused Ion Beam Microscope
> Medium Energy Ion Scattering
> PhotoElectronMicroscopy
> TEM with Double Corrector
> Time‐of‐Flight SIMS
> UHR SEM‐STEM
> UV Micro Raman
> UHV‐SPM
> Atom‐Probe
> NanoAuger
Multidisciplinary skills
> Biotechnology
> Material Science
> Micro & Nanosystems
> Nanoelectronics
> Photovoltaic
> Optoelectronics Comprehensive expertise
> Electron Microscopy
> Ion Beam Analysis
> Optical Techniques
> Sample Preparation
> Scanning Probe Microscopy
> Surface Analysis
> X ray Analysis
> Trace & Contamination Analysis
> Clean Room Metrology
Partner of the MINATEC
Partner of the MINATEC®® NanocharacterizationNanocharacterization CentreCentre Close to Leti Si technology Platform & 3D Pilot
Close to Leti Si technology Platform & 3D Pilot--lineline Close to ESRF and ILL
Close to ESRF and ILL
Investment
Investments (M€)
TEM HR holo
XPEEM NanoESCA Dual Beam
FIB
MEIS
SEM UHR ToF SIMS
X-ray gonio Dual Beam FIB
TEM UHR 0,05 SPM UHV
3D Atom probe Auger Nanoprobe
CEA‐Leti & FZJ on characterization / analysis
> Both Leti and FZJ in the submitted project:
> FP7‐INFRA 2011: NFFANanoscience Foundriesand Fine Analysis(WP5 ‐TNA5)
> Surface analysis (Olivier Renault)
> Past collaborations
> FZJ access to LETI NanoESCAXPEEM instrument jointly operated with CEA‐IRAMIS at synchrotrons beamlines(BESSY, ELETTRA, SOLEIL)
> Financial contribution of FZJ to instrument move.
> Present collaborations
> LETI access (in‐house beamtine) to FZJ‐NanoESCAat ELETTRA/Nanospectroscopybranchline
> Bilateral agreement LETI‐FZJ in preparation
> Common publications
> Future subjects
> Regular access by LETI to FZJ‐NanoESCAat synchrotron beamlines(graphene, nanowires, …)
> Regular access by FZJ to LETI‐NanoESCAfor experiments with lab‐sources
> Quantitative XPEEM and Hard X‐ray XPEEM
> Electron microscopy (David Cooper)
> Past collaborations
> David Cooper is an old PhD student of RafalDunin‐Borkowski
> We have worked continuously together since 2002
> Proposed collaborations (during the visit of D. Cooper to Julichon September 2012)
> Proposal to work on OXRAM samples with Regina Dittmannto determine the structure of (vacancy) filament in these memories by off‐axis electron holography. This will be done by switching the memories in‐situ in the TEM.