Supplementary Information for
Synthesis of 2D Ternary Layered Manganese Phosphorous Trichalcogenides towards Ultraviolet Photodetection
Guiheng Liu1, Jianwei Su1, Xin Feng1, Huiqiao Li1, Tianyou Zhai1,*
1State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering
Huazhong University of Science and Technology Wuhan 430074, China
*Corresponding author. E-mail: zhaity@hust.edu.cn
Figure S1 Schematic view of a CVT step for the synthesis of MnPSe3 single crystal.
Figure S2 Scanning electron microscopy image of 2D MnPSe3 flake.
Figure S3 (a, b) EDS spectrum and the corresponding element ratio of MnPSe3 flake.
Figure S4 (a) Optical image of MnPSe3 flake. (b) Polarization-dependent Raman spectra. (c-e) Polar plots of Raman intensity of other peaks (P1, P2, and P3).
Figure S5 (a) Polarization-dependent Raman spectra under cross-polarization configuration.
(b) Contour-color map of angle-dependent Raman intensities under cross-polarization configuration. (c-g) Polar plots of Raman intensity of P1, P2, P3, P4, and P5.
Figure S6 (a-c) Raman mapping images of P1, P2, and P3.
Figure S7 (a-b) Optical image and Raman spectra acquired before and after bending.
Figure S8 (a) OM image of the photodetector device. (b) Response rate of the device under 300 nm illumination.
Figure S9 Spectra of current noises at Vds=5 V.
Figure S10 (a, b) Band diagrams of the photodetector under dark condition and illumination.
